過去に開催された講演会・セミナー » 過去に開催された講演会・セミナー(2013年度) » 第247 回応用セラミックス研究所講演会
(オーストラリア国立研究所(CSIRO)平井 匡彦博士)
第247 回応用セラミックス研究所講演会
(オーストラリア国立研究所(CSIRO)平井 匡彦博士)
開催日時 2013/06/17 16:00-17:00
開催場所 S2棟 2F 第1・第2会議室 
(※当初予定しておりました「R3棟1F会議室」から変更となりました。)
主催応用セラミックス研究所
連絡先細野 秀雄教授(5359)

プログラム等

第247回応用セラミックス研究所講演会 

講師:平井 匡彦(オーストラリア国立研究所(CSIRO)) 

講演テーマ:A Numerical Device Model Fitting and Approach to Degradation Mechanisms in Organic Light Emitting Diodes (OLEDs)  

講演概要:Recently, significant progress has been made in the performance of OLED, particularly with regard to their brightness and lifetime. OLEDs are now a viable technology for the manufacture of large-area flat panel displays (FPD) to compete with Liquid Crystal Display (LCD) and plasma technologies. However, the operating mechanisms including charge-injection, -transport, -trapping, and -recombination phenomena in organic semiconductors are still unclear and require further investigation.
A common approach to estimate the barrier height of an organic-conductor interface is to apply the Richardson-Schottky model [1] with the value of the Richardson Factor (A*) set for a silicon-metal interface. Alternatively, Scott [2] has proposed that the value of A* for an organic-conductor interface is dependent on the state density and carrier mobility of the organic material.


Several other groups have reported methods for the demonstration of device parameters such as carrier mobility, Density of State (DOS) and barrier height.[3] We have previously shown impedance spectroscopy (IS) is a useful tool for evaluating relaxation, transport and injection in a variety of organic devices.[4-5]
In this presentation, we propose a novel Schottky and IS numerical model to evaluate carrier injection and transport behaviour of organic semiconductor materials. Using this method we have obtained values for A*, the barrier height, interface state density, DOS and carrier mobility of organic materials and interfaces as device parameters. Additionally, we have approached degradation mechanisms of OLED using transient analysis of pulsed luminescence.


References

[1] O. W. Richardson, Philos. Mag. 28, 633 (1914).
[2] J.C. Scott J.Vac.Sci.Tech. A21, 521A (2003).
[3] T. Okachi, T. Nagase, T. Kobayashi, and H. Naito: Jpn. J. Apple. Phys. 47, 8965 (2008).
[4] T. Hirai, K. Weber, J. H. Li, M. Bown and K. Ueno, 2011 SID International Symposium P181.
[5] T. Hirai, K. Weber, J. O’Connell, M. Bown and K. Ueno, 2011 SSDM International Symposium B-1-6.



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