Selected Papers

Review

  1. H. HOSONO: Built-in Nanostructures in Transparent Oxides for Novel Photonic and Electronic functions Materials; Int. J. Appl.Ceram.Technol,. 1[2], 106-118(2004)

Transparent Oxide Semiconductors (TOS) and Devices

Review

  1. H. OHTA and H. HOSONO: Transparent Oxide Optoelectronics; Material Today, June(2004)
  2. Hiromichi Ohta, Kenji Nomura, Hidenori Hiramatsu, Kazushige Ueda, Toshio Kamiya, Masahiro Hirano, Hideo Hosono, Frontier of transparent oxide semiconductors, Solid-State Electronics 47, 2261-2267(2003)
Transparent Oxide Semiconductors and Devices
  1. Finding of bipolar TOS CuInO2
    Hiroshi Yanagi, Tomomi Hase, Shuntaro Ibuki, Kazushige Ueda and Hideo Hosono: Bipolarity in electrical conduction of transparent oxide semiconductor CuInO2 with delafossite structure; Appl. Phys. Lett. 78 (2001) 1583-1585.
  2. Finding of a new p-type TOS ZnRh2O4
    Hiroshi Mizoguchi, Masahiro Hirano, Satoru Fujitsu, Tomonari Takeuchi, Kazushige Ueda and Hideo Hosono: ZnRh2O4: A p-type semiconducting oxide with a valence band composed of a low spin state of Rh3+ in a 4d6 configuration; Appl. Phys. Lett. 80 (2002) 1207-1209.
  3. Finding of the first p-type TOS
    P-Type Electrical Conduction in Transparent Thin Film of CuAlO2, Hiroshi KAWAZOE, Masahiro YASUKAWA, Hiroyuki HYODO, Masaaki KURITA, Hiroshi YANAGI, and Hideo HOSONO, Nature, 389, 939-942(1997)
    Hiroshi Yanagi, Shin-ichiro Inoue, Kazushige Ueda, Hiroshi Kawazoe, Hideo Hosono and Noriaki Hamada: Electronic structure and optoelectronic properties of transparent p-type conducting CuAlO2; J. Appl. Phys. 88 (2000) 4159-4163.
  4. Atomically flat ITO film exhibiting the largest electrical conductivity
    Hiromichi Ohta, Masahiro Orita, Masahiro Hirano, Hiroaki Tanji, Hiroshi Kawazoe and Hideo Hosono: Highly electrically conductive indium-tin-oxide thin films epitaxially grown on yttria-stabilized zirconia (100) by pulsed-laser deposition; Appl. Phys. Lett. 76 (2000) 2740-2742.
    H. OHTA, M. ORITA, M. HIRANO, and H. HOSONO: Surface morphology and crystal quality of low resistive indium tin oxide grown on yttria-stabilized zirconia ;Journal of Applied Physics, 91, 3547(2002)
  5. Very wide bandgap TOS Ga2O3
    Deep ultraviolet transparent electroconductive b-Ga2O3 thin films: M.Orita, H.Ohta, M.Hirano and H.Hosono, Appl.Phys.Lett., 77, 4166(2000)

P/N junction devices

  1. ZnRh2O4/ZnO p/n junction
    Fabrication and characterization of heteroepitaxial p-njunction diode composed of wide-gap oxide semiconductors p-ZnRh2O4 ' n-ZnO: Hiromichi Ohta, Hiroshi Mizoguchi, and Masahiro Hirano, Satoru Narushima, Toshio Kamiya and Hideo Hosono, Appl.Phys.Lett., 82[5], 823-25(2003)
  2. TOS p/n homojunction
    Hiroshi Yanagi, Kazushige Ueda, Hiromichi Ohta, Masahiro Orita, Masahiro Hirano and Hideo Hosono: Fabrication of all oxide transparent p-n homojunction using bipolar CuInO2 semiconducting oxide with delafossite structure; Sol. State Comm. 121 (2002) 15-18.
  3. Electron injection UV-light emission from TOS p/n junction
    H.Ohta, K.Kawamura, N.Sarukura, M.Orita, M.Hirano and H.HosonoFabrication of UV-Light Emitting Diode Using Transparent Conductive Oxides, Appl.Phys.Lett., 77,475(2000)
    Hiromichi Ohta, Ken-ichi Kawamura, Masahiro Orita, Masahiro Hirano, Nobuhiko Sarukura and Hideo Hosono: Current injection emission from a transparent p/n junction composed of p-SrCu2O2/n-ZnO; Appl. Phys. Lett. 77 (2000) 475-477.
    Hiromichi Ohta, Masahiro Orita, Masahiro Hirano and Hideo Hosono: Fabrication and characterization of ultraviolet-emitting diodes composed of transparent p-n heterojunction, p-SrCu2O2 and n-ZnO; J. Appl. Phys. 89 (2001) 5720-5725.
    UV Emitting Diode Composed of Transparent Oxide Semiconductors: p-SrCu2O2/n-ZnO: H.Ohta, K.Kawamura, N.Sarukura, M.Orita, M.Hirano and H.Hosono, Electronics Letters, 36, 984(2000)
  4. TOS p/n junction
    Atsushi Kudo, Hiroshi Yanagi, Kazushige Ueda, Hideo Hosono, Hiroshi Kawazoe and Yoshihiko Yano: Fabrication of transparent p-n heterojunction thin film diodes based entirely on oxide semiconductors; Appl. Phys. Lett. 75 (1999) 2851-2853.

Amorphous TOS

  1. p-type amorphous TOS
    Satoru Narushima, Kazushige Ueda, Hiroshi Mizoguchi, Hiromichi Ohta, Masahiro Hirano, Ken-ichi Shimizu, Toshio Kamiya and Hideo Hosono: P-type amorphous oxide semiconductor, ZnRh2O4, and room temperature fabrication of amorphous oxide P-N hetero-junction diodes; Adv. Mater. 15[17] (2003) 1409-1413.
  2. Mechanism of electronic conduction in amorphous TOS
    Satoru Narushima, Masahiro Orita, Masahiro Hirano and Hideo Hosono: Electronic structure and transport properties in the transparent amorphous oxide semiconductor 2 CdO GeO2; Phys. Rev. B 66 (2002) 035203.
    M. ORITA, H. OHTA, M. HIRANO, S. NARUSHIMA and H. HOSONO : Amorphous transparent conductive oxide, InGaO3(ZnO)m (m=4) : Zn4s conductor ;@Philo. Mag.B., 81, 501-515(2001)

Homologous series compounds

  1. High-performance Transparent Field Effect Transistor
    Kenji Nomura, Hiromichi Ohta, Kazushige Ueda, Toshio Kamiya, Masahiro Hirano and Hideo Hosono: Thin film transistor fabricated in single-crystalline transparent oxide semiconductor; Science 300 (2003) 1269-1272.
  2. Mechanism of carrier transport in InGaO3(ZnO)m
    K. Nomura, H. Ohta, K. Ueda, T. Kamiy, M. Hirano, and H. Hosono: Electron transport in InGaO3(ZnO)m(m=integer) studied using single-crystalline thin films and transparent MISFETs; Thin Solid Films 445 (2003) 322.
  3. Reactive Solid-Phase Epitaxy
    Single-Crystalline Films of the Homologous Series InGaO3(ZnO)mGrown by Reactive Solid-Phase Epitaxy: H.Ohta, K.Nomura, M.Orita, M.Hirano, K.Ueda, T.Suzuki, Y.Ikuhara and H.Hosono; Adv.Funct.Mater., 13[2], 139-44(2003)
    Kenji Nomura, Hiromichi Ohta, Kazushige Ueda, Masahiro Orita, Masahiro Hirano and Hideo Hosono: Novel film growth technique of single crystalline In2O3(ZnO)m (m=integer) homologous compound; Thin Solid Films 411 (2002) 147-151.

Layered Oxychalcogenides

  1. Fabrication process of epitaxial films of layered oxychalcogenides
    H. HIRAMATSU, H. OHTA, T. SUZUKI, C. HONJO, Y. IKUHARA, K. UEDA, T. KAMIYA, M. HIRANO, and H. HOSONO: Mechanism for Heteroepitaxial Growth of Transparent P-Type Semiconductor: LaCuOS by Reactive Solid-Phase Epitaxy; Crystal Growth & Design, 4[2], 301-307(2004)
    Hidenori HIRAMATSU, Kazushige UEDA, Hiromichi OHTA, Masahiro ORITA, Masahiro HIRANO and Hideo HOSONO: Heteroepitaxial Growth of a Wide-Gap P-type Semiconductor, LaCuOS; Appl.Phys.Lett., 81, 598-600(2002)
  2. Electronic structure of layered oxychalcogenides
    K. UEDA, H. HIRAMATSU, H. OHTA, M. HIRANO, T. KAMIYA, and H. HOSONO: Single-atomic-layered quantum wells built in wide-gap semiconductors LnCuOCh (Ln=lanthanide, Ch=chalcogen); Phys. Rev., B 69, 155305(2004)
    Shin-ichiro Inoue, Kazushige Ueda and Hideo Hosono: Electronic structure of the transparent p-type semiconductor (LaO)CuS; Phys. Rev. B 64 (2001) 245211.
  3. Non-linear optical properties in layered oxychalcogenides
    H. KAMIOKA, H. HIRAMATSU, H. OHTA, M. HIRANO, K. UEDA, T. KAMIYA, and H. HOSONO: Third-order optical nonlinearity originating from room-temperature exciton in layered compounds LaCuOS and LaCuOSe; Applied Physics Letters, 84[6], 879-882(2004)
  4. Room-temperature exciton and photoluminescence in layered oxychalcogenides
    Hidenori Hiramatsu, Kazushige Ueda, Kouhei Takafuji, Hiromichi Ohta, Masahiro Hirano, Toshio Kamiya, and Hideo Hosono: Intrinsic excitonic photoluminescence and band-gap engineering of wide-gap p-type oxychalcogenide epitaxial films of LnCuOCh (Ln=La, Pr, and Nd; Ch=S or Se) semiconductor alloys; J. Appl. Phys., 94[9], 5805-5808 (2003)
    K. UEDA, S. INOUE, N. SARUKURA, M. HIRANO and H. HOSONO :Room-temperature excitons in wide-gap layered-oxysulfide semiconductor: LaCuOS ;@Appl. Phys. Lett., 78, 2333(2001)
  5. Degenerate p-type conduction in LaCuOSe:Mg
    Hidenori Hiramatsu, Kazushige Ueda, Hiromichi Ohta, Masahiro Hirano, Toshio Kamiya and Hideo Hosono: Degenerate p-type conductivity in wide-gap LaCuOS1-xSex (x = 0 - 1) epitaxial films; Appl. Phys. Lett. 82 (2003) 1048-1050.
  6. Transparent p-type semiconductor: LaCuOS layered oxysulfide:@K. Ueda, S. Inoue, S. Hirose, H. Kawazoe, and H. Hosono, Appl. Phys. Lett., 77, 2701 (2000)

C12A7

  1. Field electron emission from C12A7:e- and application to FED
    Y. TODA, S. MATSUISHI, K. HAYASHI, K. UEDA, T. KAMIYA, M. HIRANO, and H. HOSONO: Field emission of electron anions clathrated in subnanometer-sized cages of [Ca24Al28O64]4+(4e-); Adv. Mater ., 16, 685-689 (2004)

Organic semiconductors

  1. Organic FET
    H. OHTA, T. KAMBAYASHI, K. NOMURA, M. HIRANO, K. ISHIKAWA, H. TAKEZOE, and H. HOSONO: Transparent organic thin-film transistor with a laterally grown non-planar phthalocyanine channel; Advanced Materials, 16[4], 312-316(2004)
  2. Organic epitaxial film
    Hiromichi Ohta, Takuya Kambayashi, Masahiro Hirano, Hajime Hoshi, Ken Ishikawa, Hideo Takezoe, and Hidio Hosono: Application of a Transparent Conductive Substrate with and Atomically Flat and Stepped Surface to Lateral Growth of an Organic Molecule: Vanadyl Phthalocyanine; Advanced Materials, 15[15], 1258-1262(2003)

C12A7

  1. Field electron emission from C12A7:e- and application to FED
    Y. TODA, S. MATSUISHI, K. HAYASHI, K. UEDA, T. KAMIYA, M. HIRANO, and H. HOSONO: Field emission of electron anions clathrated in subnanometer-sized cages of [Ca24Al28O64]4+(4e-); Adv. Mater ., 16, 685-689 (2004)   
  2. Creation of inorganic electride C12A7:e-
    Satoru Matsuishi, Yoshitake Toda, Masashi Miyakawa, Katsuro Hayashi, Toshio Kamiya, Masahiro Hirano, Isao Tanaka and Hideo Hosono: High Density Electron Anion in a Nano-porous Single Crystal: [Ca24Al28O64]4+(4e-); Science 301 (2003) 626.
  3. High-density O- radicals in C12A7
    K.HAYASHI, M. HIRANO, S. MATSUISHI, and H. HOSONO : Microporous crystal 12CaOE7Al2O3 encaging abundant O- radicals ; J.Amer.Chem.Soc., 124, 738(2002)
    K. Hayashi, S. Matsuishi, N. Ueda, M. Hirano and H. Hosono, Maximum Incorporation of Oxygen Radicals O- and O2-, into 12CaOE7Al2O3 with a Nanoporous Structure, Chem. Mater., 15, 1851-54(2003)
  4. O- emission from C12A7
    Quanxin.LI, Katsuro HAYASHI, M. NISHIOKA, H.KASHIWAGI, Masahiro HIRANO, Y.TORIMOTO, Hideo HOSONO, and M. SDAKATA: Absolute emission current density of O|from 12CaOE7Al2O3 crystal; Appl.Phys.Lett., 80, 4259(2002)
    Quanxin Li, Katsuro HAYASHI, Masateru NISHIOKA, Hideo KASHIWAGI, Masahiro HIRANO, Yoshifumi TORIMOTO, Hideo HOSONO, and Masayoshi SADAKATA: Reproducibility of O- Negative Ion Emission from C12A7 Crystal Surface; Jpn.J.Appl.Phys., 41, L530(2002)
    Katsuro HAYASHI, Masahiro HIRANO, Quanxin LI, M. NISHIOKA, M. SADAKATA, Y. TORIMOTO, Satoru MATSUISHI, and@Hideo HOSONO: Electric Field Emission of High Density O- Ions from 12CaO~7Al2O3 Engineered to Incorporate Oxygen Radicals; Electrochemical and Solid State Lett., 5, 1(2002)
  5. Mechanism of electronic conduction in conductive C12A7
    Peter V. Sushko, Alexander L. Shluger, Katsuro Hayashi, Masahiro Hirano, and Hideo Hosono: Electron Localization and a Confined Electron Gas in Nanoporous Inorganic Electrides; Physical Review Letters, 91[12], 126401-1~4(2003)
  6. Thin film formation of conductive C12A7
    Masashi Miyakawa, Katsuro Hayashi, Masahiro Hirano, Yoshitake Toda, Toshio Kamiya, and Hideo Hosono: Fabrication of Highly Conductive 12CaOE7Al2O3 Thin Films Encaging Hydride ions by Proton Inplatation; Adv. Mater, 15[13]1100-1102(2003)
  7. Single-crystal growth of C12A7
    S. WATAUCHI, I. TANAKA, K. HAYASHI, M. HIRANO, and H. HOSONO : Crystal growth of Ca12Al14O33 by the floating zone method ; J.Cryst.Growth, 237, 496-502 (2002)
  8. Translucent ceramics of C12A7
    Katsuro HAYASHI, Masahiro HIRANO, and Hideo HOSONO: Translucent ceramics of 12CaOE7Al2O3 with microporous structure; J.Mater.Res., 17, 1244(2002)
  9. Electronic conductor conversion of C12A7:H-
    Katsuro HAYASHI, Satoru MATSUISHI, Toshio KAMIYA, Masahiro HIRANO, and Hideo HOSONO, Light-induced conversion of refractory oxide into persistent electronic conductor; Nature, 419, 462~465(2002)

Femto-second laser processing, Optical applications

  1. DFB laser fabricated by femto-second pulses in LiF crystal
    K. KAWAMURA, M. HIRANO, T. KUROBORI, D. TAKAMIZU, T. KAMIYA, and H. HOSONO: Femtosecond-laser-encoded distributed- feedback color center laser in lithium fluoride single crystals ; Applied Physics Letters, 84[3], 331-313(2004)
  2. Fabrication of periodic nanostructures by femto-second laser pulses in transparent materials
    Ken-ichi KAWAMURA, Toshio KAMIYA, Masahiro HIRANO, and Hideo HOSONO: Holographic writing of volume-type microgratings in silica glass by a single chirped laser pulse; Appl.Phys.Lett., 81, 1137-1139(2002)
    Ken-ichi Kawamura, Nobuhiko Sarukura, Masahiro Hirano and Hideo Hosono: Holographic encoding of permanent gratings embedded in diamond by two beam interference of a single femtosecond near-infrared laser pulse; Jpn. J. Appl. Phys. 39 (2000) L767-L769.
  3. Fabrication of periodic nanostructures by femto-second laser pulses at surfaces of transparent materials 
    H.Kamioka, T. Miura, K. Kawamura, M. Hirano, and H. Hosono: Fine-pitched microgratings encoded by interference of UV femtosecond laser pulses; J.Nanoscience & Nanotech. 2, 321-322(2002)
    Ken-ichi.KAWAMURA, Eiji MOTOMOTSU, Masahiro HIRANO, and Hideo HOSONO: Formation of Microstructure in SiO2 Thin Film by a Femtosecond Laser Pulse; Jpn.J.Appl.Phys., 41, 4400-4403(2002)
    K. KAWAMURA, N.SARUKURA, M. HIRANO, and H. HOSONO : Holographic encoding of fine-pitched micrograting structures in amorphous SiO2 thin films by a single femtosecond laser pulse ;@Appl.Phys.Lett., 78, 1038(2001)
    K. KAWAMURA, N. SARUKURA, M. HIRANO and H. HOSONO : Periodic nano-structure array in crossed holographic gratings on silica glass by interferred two infrared femtosecond laser pulses ; @Appl.Phys.Lett., 79, 1228-1230(2001)
    Fabrication of Surface Relief Gratings on Transparent Dielectric Materials by Two-beam Holographic method using infrared femtosecond laser pulses: K.Kawamura, T.Ogawa, N.Sarukura, M.Hirano and H.Hosono, Appl.Phys.B, 71, 119(2000)
    Holographic Encoding of Permanent Gratings Embedded in Diamond by Two Beam Interference of a Single Femtosecond Near-infrared Laser Pulse: K.Kawamura, N.Sarukura, M.Hirano, and H.Hosono, @Jpn.J.Appl.Phys., (express letter) 39, L767(2000)
  4. Technique for adjusting femtosecond laser pulses
    K. KAWAMURA, N. ITO, N. SARUKURA, M. HIRANO, and H. HOSONO : New adjustment technique for time coincidence of femtosecond laser pulses using third harmonic generation in air and its application to holograph encoding system ; Rev.Sci.Instr., 73, 1711-4(2002)

SiO2

  1. K. KAJIHARA, L. SKUJA, M. HIRANO, and H. HOSONO: Role of Mobile Interstitial Oxygen Atoms in Defect Processes in Oxides: Interconversion between Oxygen-Associated Defects in SiO2 Glass; Physical Review Letters, 92[1], 015504-1(2004)
  2. Y. IKUTA, K. KAJIHARA, M. HIRANO, and H. HOSONO: Correlation between oxygen-deficient center formation and volume compaction in synthetic SiO2 glass upon ArF or F2 excimer-laser irradiation; Appl. Opt., 43[11], 2332(2004)
  3. Structural alternation and defect formation in SiO2 glasses by F2 excimer laser irradiation: K. Kajihara, Y. Ikuta, M. Hirano and H. Hosono; Phys. Chem. Glasses, 43 [3], 137-40(2002)
  4. Takenobu Suzuki, Linards Skuja, Koichi Kajihara, Masahiro Hirano, Toshio Kamiya and Hideo Hosono: Electronic Structure of Oxygen Dangling Bond in Glassy SiO2: The Role of Hyperconjugation; Phys. Rev. Lett. 90 (2003) 186404.
  5. Electronic structure of oxygen dangling bond in glassy SiO2: T.Suzuki, L.Skuja, K.Kajihara, M.Hirano, T.Kamiya, and H.Hosono; the role of hyperconjugation, Physical Review Letters, 90, 186404-1~4(2003)
  6. Yoshiaki Ikuta, Koichi Kajihara, Masahiro Hirano, Shinya Kikugawa and Hideo Hosono: Effects of H2 impregnation on excimer-laser-induced oxygen-deficient center formation in synthetic SiO2 glass; Appl. Phys. Lett. 80 (2002) 3916-3918.
  7. Takenobu Suzuki, Masahiro Hirano and Hideo Hosono: Optical gaps of alkali borate and alkali fluoroborate glasses; J. Appl. Phys. 91 (2002) 4149.
  8. Yoshiaki Ikuta, Shinya Kikugawa, Masahiro Hirano and Hideo Hosono: Defect formation and structural alternation in modified SiO2 glasses by irradiation with F2 laser or ArF excimer laser; J. Vac. Sci. Technol. B 18 (2000) 2891-2895.
  9. Masafumi Mizuguchi, Linards Skuja, Hideo Hosono and Tohru Ogawa: F-doped and H2-impregnated synthetic SiO2 glasses for 157 nm optics; J. Vac. Sci. Technol. B 17 (1999) 3280-3284.
  10. Junji Nishii, Kenji Kintaka, Hideo Hosono, Hiroshi Kawazoe, Makie Kato and Ken-ichi Muta: Pair generation of Ge electron centers and self-trapped hole centers in GeO2-SiO2 glasses by KrF excimer-laser irradiation; Phys. Rev. B 60 (1999) 7166-7169.
  11. Masafumi Mizuguchi, Linards Skuja, Hideo Hosono and Tohru Ogawa: Photochemical processes induced by 157-nm light in H2-impregnated glassy SiO2:OH; Opt. Lett. 24 (1999) 863-865.
  12. H. HOSONO, Y. IKUTA, T. KINOSHITA, K.KAJIHARA, and M. HIRANO : Physical disorder and optical properties in the vaccum ultraviolet region of amorphous SiO2 ; Phys.Rev.Lett., 87, 175501(2001)
  13. Yoshiaki IKUTA, Kou-ichi KAJIHARA, Masahiro HIRANO, Shinya KIKUGAWA, and Hideo HOSONO: Efects of H2 impregnation on excimer-laser-induced oxygen-deficient center formation in synthetic SiO2 glass; Appl.Phys.Lett., 80, 3916(2002)
  14. Koichi KAJIHARA, Linards SKUJA, Masahiro HIRANO, and Hideo HOSONO: Diffusion and Reaction of Hydrogen in F2-laser-irradiated SiO2 Glass; Phys.Rev.Lett., 89, 135507-1~4(2002)
  15. Koichi KAJIHARA, Yoshiaki IKUTA, Masahiro HIRANO, and Hideo HOSONO: Dependence of Defect Formation in SiO2 Glass by F2-laser-irradiation; Applied Physics Letters, 81, 3164~66(2002)
  16. M. OHTO, S. KIKUGAWA, N. SARUKURA and H. HOSONO : Optical fiber for deep ultraviolet light ;@IEEE Photon.Technol.Letter, 13, 978-980(2001)
  17. K. KAJIHARA, L.SKUJA, M. HIRANO and H. HOSONO : Formation and decay of non-bridging oxcygen hole centers in SiO2 glasses induced by F2 irradiation: in situ observation using a pump and probe technique ; Appl.Phys.Lett., 79, 1757-59(2001)
  18. H. HOSONO, Y. IKUTA, T. KINOSHITA and M. HIRANO : Physical disorder and optical properties in vacuum ultraviolet region of amorphous SiO2 ; Phys.Rev.Lett., 87, 175501(2001)
  19. Oxygen-related Intrinsic-Defects I Glassy SiO2: Interstitial Ozone Molecules,@L.Skuja, M.Hirano and H.Hosono, Phys.Rev.Lett., 84, 302-304(2000)
  20. Experimental Evidence for Frenkel Defect Formation in Amorphous SiO2 by Electronic Exitation, Hideo HOSONO, Hiroshi KAWAZOE, and Noriaki MATSUNAMI, Phys. Rev. Lett., 79, 4501-4503(1997)

Nano Devices

  1. Device applications of natural nanostructures formed in nanocrystalline silicon
    Z.A.K. Durrani, T. Kamiya, Y.T. Tan, H. Ahmed, and N. Lloyd: Single-electron charging in nanocrystalline siilcon point-contacts; Microelectronic Engineering, 63, 267-275 (2002)
    H. MIZUTA, Y. FURUTA, T. KAMIYA, Y.T. TAN, Z.A.K. DURRANI, S. AMAKAWA, K. NAKAZATO, and H. AHMED: Nanosilicon for single-electron devices; Current Applied Physics 4, 98-101 (2004)
  2. Room-temperature single-electron transistor
    Y.T. TAN, T. KAMIYA, Z.A.K. DURRANI, and H. AHMED: Room temperature nanocrystaline silicon single-electron transistors; J. Appl. Phys. 94, 633 (2003)
    T. Kamiya, Y.T. Tan, Z.A.K. Durrani, and H. Ahmed: Modification of the tunneling barrier in a nanocrystalline silicon single-electron transistor; J. Non-Cryst. Solids., 299-302, 405-410 (2002)
  3. Single-electron transistor using silicon nanocrystallites for charging islands
    Y.T. Tan, T. Kamiya, Z.A.K. Durrani and H. Ahmed: Single-electron effects in side-gated point contacts fabricated in low-temperature deposited nanocrystalline silicon films; Appl. Phys. Lett. 78 (2001) 1083-1085.
  4. Effects of H2O vapor passivation on individual grain boundaries
    T. KAMIYA, Z.A.K. DURRANI, H. AHMED, T. SAMESHIMA, Y. FURUTA, H. MIZUTA, and N. LLOYD: Reduction of grain-boundary potential barrier height in polycrystalline silicon with hot H2O-vapor annealing probed using point-contact devices; J. Vac. Sci. Technol. B 21, 1000-1003 (2003)
  5. Properties of individual grain boundary tunneling barriers in polycrystalline silicon
    Toshio Kamiya, Z. A. K. Durrani, and H. Ahmed: Control of grain-boundary tunneling barriers in polycrystalline silicon; Appl. Phys. Lett., 81, 2388-2390 (2002).
    Y. Furuta, H. Mizuta, K. Nakazato, T. Kamiya, Y.T. Tan, Z.A.K. Durrani, and K. Taniguchi: Characterisation of tunnel-barriers in polycrystalline Si point-contact single-electron transistors; Jpn. J. Appl. Phys., 41, 2675-2678 (2002)
  6. Effects of individual grain boundaries on carrier transport in polycrystalline silicon
    Yoshikazu Furuta, Hiroshi Mizuta, Kazuo Nakazato, Yong Tsong. Tan, Toshio Kamiya, Zahid A.K. Durrani, Haroon Ahmed and Kenji Taniguchi: Carrier transport across a few grain boundaries in highly doped polycrystalline silicon; Jpn. J. Appl. Phys. 40 (2001) L615-L617.
  7. Technique to control nanostructures in silicon thin films
    T. Kamiya, K. Nakahata, Y.T. Tan, Z.A.K. Durrani and I. Shimizu: Growth, structure and transport properties of thin (>10 nm) n-type microcrystalline silicon prepared on silicon oxide and its application to single electron transistor; J. Appl. Phys. 89 (2001) 6265-6271.