学生の筆頭論文、連名総説・招待講演

2011年

• Takayoshi Katase, Yoshihiro Ishimaru, Akira Tsukamoto, Hidenori Hiramatsu, Toshio Kamiya, Keiichi Tanabe, and Hideo Hosono
  Advantageous grain boundaries in iron pnictide superconductors
  Nat. Commun. 2 (2011) 409
• Takayoshi Katase, Hidenori Hiramatsu, Vladimir Matias, Chris Sheehan, Yoshihiro Ishimaru, Toshio Kamiya, Keiichi Tanabe, and Hideo Hosono
  Biaxially textured cobalt-doped BaFe2As2 films with high critical current density over 1 MA/cm2 on MgO-buffered metal-tape flexible substrates
  Appl. Phys. Lett. 98 (2011) 242510
• D.H. Lee, K. Nomura, T. Kamiya, H. Hosono
  Diffusion-Limited a-IGZO/Pt Schottky Junction Fabricated at 200oC on a Flexible Substrate
  IEEE Electron Device Letters 32 (2011) 1695
• Kyeongmi Lee, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Hideo Hosono
  Photovoltaic properties of n-type amorphous In–Ga–Zn–O and p-type single crystal Si heterojunction solar cells: Effects of Ga content
  Thin Solid Films (2011) 
• K. Abe, N. Kaji, H. Kumomi, K. Nomura, T.Kamiya, M. Hirano, H. Hosono
  Simple Analytical Model of On Operation of Amorphous In–Ga–Zn–O Thin-Film Transistors
  IEEEE Trans. Electron Dev. 58 (2011) 3463
• Keisuke Ide, Yutomo Kikuchi, Kenji Nomura, Mutsumi Kimura, Toshio Kamiya, and Hideo Hosono
  Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors
  Appl. Phys. Lett. 99 (2011) 093507
• Taku Hanna, Yoshinori Muraba, Satoru Matsuishi, Naoki Igawa, Katsuaki Kodama, Shin-ichi Shamoto, and Hideo Hosono
  Hydrogen in layered iron arsenides: Indirect electron doping to induce superconductivity
  Phys. Rev. B 84 (2011) 024521
• Lijie Shao, Kenji Nomura, Toshio Kamiya, and Hideo Hosono Operation Characteristics of Thin-Film Transistors Using Very Thin Amorphous In-Ga-Zn-O Channels Electrochemical and Solid-State Letters 14 (2011) H197-H200

2010年

• Yoshinori Muraba, Satoru Matsuishi, Sung-Wng Kim, Toshiyuki Atou, Osamu Fukunaga, and Hideo Hosono High-pressure synthesis of the indirectly electron-doped iron pnictide superconductor Sr1-xLaxFe2As2 with maximum Tc = 22 K PHYSICAL REVIEW B (RAPID COMMUNICATION) 82 (2010) 180512(R)
• Y. Nishio, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, H. Hosono Short-channel nanowire transistor using a nanoporous crystal semiconductor 12CaO・7Al2O3 Materials Science and Engineering B 173 (2010) 37-40.
• Toshihiro Yoshizumi, Satoru Matsuishi, Sung-Wng Kim, Hideo Hosono, and Katsuro Hayashi Iodometric Determination of Electrons Incorporated into Cages in 12CaO・7Al2O3 Crystals J.Physical Chemistry C 114 (2010) 15354-15357.
• Dong Hee Lee, Ken-ichi Kawamura, Kenji Nomura, Toshio Kamiya, and Hideo Hosono Large Photoresponse in Amorphous InGaZnO and Origin of Reversible and Slow Decay Electrochemical and Solid-State Letters 13 (2010) H324-H327.
• Dong Hee Lee, Ken-ichi Kawamura, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono Steady-state photoconductivity of amorphous In?Ga?Zn?O Thin Solid Films 518 (2010) 3000-3003.
• Tetsuya Tohei, Teruyasu Mizoguchi, Hidenori Hiramatsu, Hideo Hosono, Yuichi Ikuhara Interface atomic structure of LaCuOSe:Mg epitaxial thin lm and MgO substrate Materials Science and Engineering B 173 (2010) 229-233.
• Takayoshi Katase, Yoshihiro Ishimaru, Akira Tsukamoto, Hidenori Hiramatsu, Toshio Kamiya, Keiichi Tanabe and Hideo Hosono DC superconducting quantum interference devices fabricated using bicrystal grain boundary junctions in Co-doped BaFe2As2 epitaxial films Supercond. Sci. Technol. 23 (2010) 082001-1 - 4.
• Takayoshi Katase, Yoshihiro Ishimaru, Akira Tsukamoto, Hidenori Hiramatsu, Toshio Kamiya, Keiichi Tanabe, and Hideo Hosono Josephson junction in cobalt-doped BaFe2As2 epitaxial thin films on (La,Sr)(Al,Ta)O3 bicrystal substrates Appl. Phys. Lett. 96 (2010) 142507-1 - 3.
• Takayoshi Katase , Hidenori Hiramatsu , Toshio Kamiya, and Hideo Hosono High Critical Current Density 4 MA/cm2 in Co-doped BaFe2As2 Epitaxial Films Grown on (La,Sr)(Al,Ta)O3 Substrates without Buffer Layers Applied Physics Express 3 (2010) 063101.
• Tomomasa Shinozaki, Kenji Nomura, Takayoshi Katase, Toshio Kamiya, Masahiro Hirano, Hideo Hosono Fabrication of GaN epitaxial thin film on InGaZnO4 single-crystalline buffer layer Thin Solid Films 518 (2010) 2996-2999.
• Yutomo Kikuchi, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono Device characteristics improvement of a-In?Ga?Zn?O TFTs by low-temperature annealing Thin Solid Films 518 (2010) 3017-3021.
• Takayoshi Katase, Kenji Nomura, Hiromichi Ohta, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, and Hideo Hosono Fabrication of Atomically Flat ScAlMgO4 Epitaxial Buffer Layer and Low-Temperature Growth of High-Mobility ZnO Films Cryst. Growth & Des. 10 (2010) 1084-1089.

2009年

• Takatoshi Nomura, Yasunori Inoue, Satoru Matsuishi, Masahiro Hirano, Jung Eun Kim, KenichiKato,,Masaki Takata and Hideo Hosono Comparison of crystal structures and the effects of Co substitution in a new member of the Fe-1111 superconductor family AeFeAsF (Ae = Ca and Sr): a possible candidate for a higher-Tc superconductor Supercond. Sci. Technol. 22 (2009) 055016.
• Kenji Sugiura, Hiromichi Ohta, Yukiaki Ishida, Rong Huang, Tomohiro Saito, Yuichi Ikuhara, Kenji Nomura, Hideo Hosono, and Kunihito Koumoto Structural Transformation of Ca-Arrangements and Carrier Transport Properties in Ca0:33CoO2 Epitaxial Films Applied Physics Express 2 (2009) 035503.
• Takatoshi Nomura, Yasunori Inoue, Satoru Matsuishi, Masahiro Hirano, JungEun Kim, Kenichi Kato, Masaki Takata and Hideo Hosono Comparison of crystal structures and the effects of Co substitution in a new member of the Fe-1111 superconductor family AeFeAsF (Ae = Ca and Sr): a possible candidate for a higher-Tc superconductor Supercond. Sci. Technol. 22 (2009) 055016.
• Tetsuya Tohei, Teruyasu Mizoguchi, Hidenori Hiramatsu, Yoichi Kamihara, Hideo Hosono, and Yuichi Ikuhara Direct imaging of doped fluorine in LaFeAsO1-xFx superconductor by atomic scale spectroscopy Appl. Phys. Lett. 95 (2009) 193107-1 - 3.
• Kosuke Matsuzaki, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, and Hideo Hosono Effects of post-annealing on (110) Cu2O epitaxial lms and origin oflow mobility in Cu2O thin-film transistor Phys. Stat. Sol. A 206 (2009) 2192-2197.
• Yoichi Ogo, Hidenori Hiramatsu, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Mutsumi Kimura, Masahiro Hirano, and Hideo Hosono Tin monoxide as an s-orbital-based p-type oxide semiconductor: Electronic structures and TFT application Phys. Status Solidi A 206 (2009) 2187-2191.
• Takayoshi Katase, Hidenori Hiramatsu, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono Atomically-flat, chemically-stable, superconducting epitaxial thin film of iron-based superconductor, cobalt-doped BaFe2As2 Solid State Commun. 149 (2009) 2121-2124.
• Takayoshi Katase, Kenji Nomura, Hiromichi Ohta, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono Large domain growth of GaN epitaxial films on lattice-matched buffer layer ScAlMgO4 Mater. Sci. & Eng. B 161 (2009) 66-70.
• Y. Adachi, S.-W. Kim, T. Kamiya, and H. Hosono Bistable resistance switching in surface-oxidized C12A7:e- single-crystal Mater. Sci. & Eng. B 161 (2009) 76-79.
• Hiromasa Tawarayama, Hiroshi Kawazoe, and Hideo Hosono Hydrogen permeation of tungsten phosphate glass thin films,Solid State Ionics Solid State Ionics 180 (2009) 556-559.
• Kenji Sugiura, Hiromichi Ohta,Shin-ichi Nakagawa, Rong Huang, Yuichi Ikuhara, Kenji Nomura, Hideo Hosono, and Kunihito Koumoto Anisotropic carrier transport properties in layered cobaltate epitaxial films grown by reactive solid-phase epitaxy Appl. Phys. Lett. 94 (2009) 152105-1 - 3.

2008年

• Kosuke Matsuzaki, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, and Hideo Hosono Epitaxial growth of high mobility Cu2O thin films and application to p-channel thin film transistor Appl. Phys. Lett. 93 (2008) 202107-1-3.
• Hsing-Hung Hsieh, Toshio Kamiya, Kenji Nomura, Hideo Hosono, and Chung-Chih Wu Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states Appl. Phys. Lett. 92 (2008) 133503-1 - 3.
• Takatoshi Nomura, Sung Wng Kim, Yoichi Kamihara, Masahiro Hirano, Peter V. Sushko, Kenichi Kato, Masaki Takata, Alexander L. Shluger, and Hideo Hosono Tetragonal? Orthorhombic Phase Transition and F-Doping Effects on the Crystal Structure in the Iron-Based High-Tc Superconductor LaFeAsO J. Phys. Soc. Jpn. Suppl. C 77 (2008) 32-35.
• T.Nomura, S-WKim, Y. Kamihara, M. Hirano, P. V. Sushko,K.Kato, M. Takata, A L Shluger, and H Hosono Crystallographic phase transition and high-Tc superconductivity in LaFeAsO:F Supercond. Sci. Technol. 21 (2008) 125028.
• Takumi Watanabe, Hiroshi Yanagi, Yoichi Kamihara, Toshio Kamiya, Masahiro Hirano, Hideo Hosono Nickel-based layered superconductor, LaNiOAs J. Sol. State Chem. 181 (2008) 2117-2120.
• Y. Nishio, K. Nomura, M. Miyakawa, K. Hayashi, H. Yanagi, T. Kamiya, M. Hirano, H. Hosono Fabrication and transport properties of 12CaO・7Al2O3 (C12A7) electride nanowire Phys. Stat. Sol. A 205 (2008) 2047-2051.
• Youichi Ogo, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono Amorphous Sn-Ga-Zn-O channel thin-film transistors Phys. Stat. Sol. A 205 (2008) 1920-1924.
• Takashi Mine, Hiroshi Yanagi, Toshio Kamiya, Yoichi Kamihara, Masahiro Hirano, and Hideo Hosono Nickel-based phosphide superconductor with infinite-layer structure, BaNi2P2 Solid State Communications 147 (2008) 111-113.
• Yoichi Ogo, Hidenori Hiramatsu, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, and Hideo Hosono p-channel thin-film transistor using p-type oxide semiconductor, SnO Appl. Phys. Lett. 93 (2008) 032113.
• Yasuhiro Shimura, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono Specific contact resistances between amorphous oxide semiconductor In?Ga?Zn?O and metallic electrodes Thin Solid Films 516 (2008) 5899-5902.
• Takayoshi Katase, Kenji Nomura, Hiromichi Ohta, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono Fabrication of ScAlMgO4 epitaxial thin films using ScGaO3(ZnO)m buffer layers and its application to lattice-matched buffer layer for ZnO epitaxial growth Thin Solid Films 516 (2008) 5842-5846.
• Takashi Mine, Hiroshi Yanagi, Kenji Nomura, Toshio Kamiya, Masahiro Hirano, Hideo Hosono Control of carrier concentration and surface flattening of CuGaO2 epitaxial films for a p-channel transparent transistor Thin Solid Films 516 (2008) 5790-5794.
• Kachirayil J. Saji, Madambi K. Jayaraj, Kenji Nomura, Toshio Kamiya and Hideo Hosono Optical and Carrier Transport Properties of Cosputtered Zn?In?Sn?O Films and Their Applications to TFTs J. Electrochem. Soc. 155 (2008) H390-H395.
• Yoshimitsu Kohama, Sung Wng Kim, Takeo Tojo, Hitoshi Kawaji, Tooru Atake, Satoru Matsuishi, and Hideo Hosono Evidence for Bardeen-Cooper-Schrieffer-type superconducting behavior in the electride (CaO)12(Al2O3)7:e- from heat capacity measurements Phys. Rev. B 77 (2008) 092505.

2007年

• Ki-Beom Kim, Maiko Kikuchi, Masashi Miyakawa, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, and Hideo Hosono Photoelectron Spectroscopic Study of C12A7:e- and Alq3 Interface: The Formation of a Low Electron-Injection Barrier J. Phys. Chem. C 111 (2007) 8403-8406.
• Yoshitake Toda, Hiroshi Yanagi, Eiji Ikenaga, Jung Jin Kim, Masaaki Kobata, Sigenori Ueda, Toshio Kamiya, Masahiro Hirano, Keisuke Kobayashi, and Hideo Hosono Work Function of a Room-Temperature, Stable Electride [Ca24Al28O64]4+(e?)4 Adv. Mater. 19 (2007) 3564-3569.
• Takumi Watanabe, Hiroshi Yanagi, Toshio Kamiya, Yoichi Kamihara, Hidenori Hiramatsu, Masahiro Hirano, and Hideo Hosono Nickel-Based Oxyphosphide Superconductor with a Layered Crystal Structure, LaNiOP Inorg. Chem. 46 (2007) 7719-7721.
• Hiromasa Tawarayama, Shouichi Sugata, Hiroyuki Inoue, Hideo Hosono, and Hiroshi Kawazoe Detection of Infrared Silent Proton in Hydrogen-Reduced Tungsten Phosphate Glasses by Thermal Desorption Chem. Mater. 19 (2007) 4385-4386.
• Youichi Ogo, Hiroshi Yanagi, Toshio Kamiya, Kenji Nomura, Masahiro Hirano, Hideo Hosono Epitaxial film growth, optical, electrical, and magnetic properties of layered oxide In3FeTi2O10 JOURNAL OF APPLIED PHYSICS 101 (2007) 103714.

2006年

• Youichi Ogo, Kenji Nomura, Hiroshi Yanagi, Hiromichi Ohta, Toshio Kamiya, Masahiro Hirano and Hideo Hosono Growth and structure of heteroepitaxial thin films of homologous compounds RAO3(MO)m by reactive solid-phase epitaxy: applicability to a variety of materials and epitaxial template layers Thin Solid Films 496 (2006) 64-69.
• Kazuhisa Kurashige, Yoshitake Toda, Satoru Matstuishi, Katsuro Hayashi,Masahiro Hirano, and Hideo Hosono, Czochralski Growth of 12CaO・7Al2O3 Crystals Cryst. Growth Design 6 (2006) 1602-1605.
• Y.Ishida, A.Fujimori, H.Ohta, M.Hirano and H.Hosono: Potential profiling of the nanometer-scale charge-depletion layer in n-ZnO/p-NiO junction using photoemission spectroscopy; Appl. Phys. Lett., 89, 153502-1-3, (2006).
• Kosuke Matsuzaki, Hiroshi Yanagi, Toshio Kamiya, Hidenori Hiramatsu, Kenji Nomura, Masahiro Hirano, and Hideo Hosono: Field-induced current modulation in epitaxial film of deep-ultraviolet transparent oxide semiconductor Ga₂O₃; Appl. Phys. Lett., 88, 092106, (2006).
• Hiromasa Tawarayama, Futoshi Utsuno, Hiroyuki Inoue, Hideo Hosono, and Hiroshi Kawazoe: Coloration and Decoloration of Tungsten Phosphate Glasses by Heat Treatments at the Temperature Far below Tg under a Controlled Ambient; Chem. Mater., 18, 2810-2816, (2006).
• Eiji Motomitsu, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, and Hideo Hosono: Synthesis and characterization of layered semiconductors MCuFCh (M = Sr, Eu, Ch = S, Se); J. Sol. State Chem., 179, 1668-1673, (2006).
• A.Saitoh, S.Matsuishi, C.Se-Weon,J.Nishii, M. Oto, M. Hirano,H. Hosono: Elucidation of Codoping Effects on the Solubility Enhancement of Er³⁺ in SiO₂ Glass: Striking Difference between Al and P Codoping; J. Phys. Chem. B. (Letter), 110, 7617-7620, (2006).
• Yoshimitsu Kohama, Takeo Tojo, Hitoshi Kawaji, Tooru Atake, Satoru Matsuishi, and Hideo Hosono: Disorder of O^2- ion and incorporation of O- and O2- radicals in nanoporous crystal 12CaO・7Al2O3 studied by low-temperature heat capacity measurements; Chem. Phys. Lett., 421, 558-561, (2006).
• Kenji Sugiura, Hiromichi Ohta, Kenji Nomura, Masahiro Hirano, Hideo Hosono, Kunihito Koumoto: High electrical conductivity of layered cobalt oxide Ca3Co4O9 epitaxial films grown by topotactic ion-exchange method; Appl. Phys. Lett., 89, 032111, (2006).
• Kenji Sugiura, Hiromichi Ohta, Kenji Nomura, Hiroshi Yanagi, Masahiro Hirano,Hideo Hosono, and Kunihito Koumoto: Epitaxial Film Growth and Superconducting Behavior of Sodium-Cobalt Oxyhydrate, NaxCoO2yH2O (x~0.3, y~1.3),; Inorg. Chem. (communication), 45, 1894-1896, (2006).
• K. Sugiura, H. Ohta, K. Nomura, M. Hirano, H. Hosono, K. Koumoto, Appl. Phys. Lett. 88 (2006) 082109. Fabrication and thermoelectric properties of layered cobaltite, gamma-Sr0.32Na0.21CoO2 epitaxial films Appl. Phys. Lett. 88 (2006) 082109.

2005年

• Yoshitake Toda, Sung Wng Kim, Katsuro Hayashi, Masahiro Hirano, Toshio Kamiya and Hideo Hosono, Takeshi Haraguchi and Hiroshi Yasuda: Intense thermal field electron emission from room temperature stable electride; Appl. Phys. Lett., 87 (2005) 254103-1 - 3.
• Akira Saitoh, Satoru Matsuishi,Masanori Oto, Taisuke Miura, Masahiro Hirano, and Hideo Hosono: Elucidation of coordination structure around Ce³⁺ in doped SiO₂ glasses using pulsed electron paramagnetic resonance: Effect of phosphorus, boron, and phosphorus-boron codoping; Physical Review B, 72 (2005) 212101.
• Akira　Saitoh, Shuhei Murata, Satoru Matsuishi, Masanori Oto, Taisuke Miura, Masahiro Hirano, and Hideo Hosono: Elucidation of Phosphorus Co-doping Effects on Photoluminescence in Ce3+ activated SiO2 Glasses: determination of solvation shell structure by pulsed EPR; Chemistry Letters, 34 (2005) 1116-1117.
• Youichi Ogo, Kenji Nomura, Hiroshi Yanagi, Hiromichi Ohta, Toshio Kamiya, Masahiro Hirano and Hideo Hosono: Growth and structure of heteroepitaxial thin films of homologous compounds RAO₃(MO)_m by reactive solid-phase epitaxy: applicability to a variety of materials and epitaxial template layers; Thin Solid Films, 496 (2005) 64-69.
• Kosuke Matsuzaki, Hidenori Hiramatsu, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, and Hideo Hosono: Growth, structure and carrier transport properties of Ga₂O₃ epitaxial film examined for transparent field-effect transistor; Thin Solid Films, 496 (2005) 37-41.
• Yujiro Takeda, Kenji Nomura, Hiromichi Ohta, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano and Hideo Hosono: Growth of epitaxial ZnO thin films on lattice-matched buffer layer: Application of InGaO₃(ZnO)₆ single-crystalline thin film; Thin Solid Films 486 (2005) 28-32.
• Akihiro Takagi, Kenji Nomura, Hiromichi Ohta, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano and Hideo Hosono: Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO₄; Thin Solid Films 486 (2005) 38-41.

2004年

• Satoru Matsuishi, Katsuro Hayashi, Masahiro Hirano, Isao Tanaka, and Hideo Hosono: Superoxide Ion Encaged in Nanoporous Crystal 12CaO・7Al2O3 Studied by Continuous Wave and Pulsed Electron Paramagnetic Resonance; J. Phys. Chem. B 108 (2004) 18557.
• 林克郎, 松石聡, 宮川仁, Peter V. Sushko, 神谷利夫: 透明ナノポ−ラス結晶：12CaO・7Al2O3; オプトロニクス 「機能性透明酸化物とオプトエレクトロニクス −ERATO細野透明電子活性プロジェクト成果」, 274, 140-147, (2004).
• Yoshitake Toda, Satoru Matsuishi, Katsuro Hayashi, Kazushige Ueda, Toshio Kamiya, Masahiro Hirano and Hideo Hosono, Field emission of electron anions clathrated in subnanometer-sized cages of [Ca₂₄Al₂₈O₆₄]⁴⁺(4e^-), Adv. Mater. 16 (2004) 685-689.
• Kenij Nomura, Hiromichi Ohta, Kazushige Ueda, Toshio Kamiya, Masahiro Hirano and Hideo Hosono, All oxide transparent MISFET using high-k dielectrics gates, Microelectr. Eng. 72 (2004) 294-298.
• Kenji Nomura, Hiromichi Ohta, Toshiyuki Suzuki, Chizuru Honjyo, Kazushige Ueda, Toshio Kamiya, Masahiro Orita, Yuichi Ikuharac, Masahiro Hirano and Hideo Hosono: Growth Mechanism for Single-Crystalline Thin Film of InGaO₃(ZnO)₅ by Reactive Solid-Phase Epitaxy; J. Appl. Phys., 95, 5532, (2004).
• Kenji Nomura, Hiromichi Ohta, Kazushige Ueda, Toshio Kamiya, Masahiro Hirano and Hideo Hosono: Carrier transport of extended and localized states in InGaO₃(ZnO)₅; Mater. Res. Soc. Symp. Proc. (San Francisco, USA, 12-16, Apr., 2004), 811, E2.9.1-6, (2004).
• 神谷利夫、戸田喜丈、細野秀雄: 自然ナノ構造を利用した新機能開拓―安定なエレクトライドの合成と冷電子源としての応用―; ファインケミカル, 33, 22-35, (2004).
• 細野秀雄、松石聡: 電子がアニオンとして働くエレクトライド; 現代化学 395 (2004)27-33.
• H. HIRAMATSU, H. OHTA, T. SUZUKI, C. HONJO, Y. IKUHARA, K. UEDA, T. KAMIYA, M. HIRANO and H. HOSONO, Mechanism for Heteroepitaxial Growth of Transparent P-Type Semiconductor: LaCuOS by Reactive Solid-Phase Epitaxy, Crystal Growth & Design 4 (2004)301-307.
• H. HIRAMATSU, K. UEDA, H. OHTA, M. HIRANO, T. KAMIYA, and H. HOSONO: Wide gap p-type degenerate semiconductor: Mg-doped LaCuOSe; Thin Solid Films, 445, 304-308 (2004).
• H. HIRAMATSU, H. OHTA, T. SUZUKI, C. HONJO, Y. IKUHARA, K. UEDA, T. KAMIYA, M. HIRANO, and H. HOSONO: Mechanism for Heteroepitaxial Growth of Transparent P-Type Semiconductor: LaCuOS by Reactive Solid-Phase Epitaxy; Crystal Growth & Design, 4[2], 301-307(2004).
• H. HIRAMATSU, K. UEDA, K. TAKAFUJI, H. OHTA, M. HIRANO, T. KAMIYA, and H. HOSONO: Fabrication of heteroepitaxial thin films of layered oxychalcogenides LnCuOCh (Ln=La-Nd; Ch=S-Te) by reactive solid-phase epitaxy; J. Mater. Res., 19, 2137-2143, (2004).
• H. HIRAMATSU, K. UEDA, K. TAKAFUJI, H. OHTA, M. HIRANO, T. KAMIYA, and H. HOSONO: Degenerate electrical conductive and excitonic photoluminescence properties of pitaxial films of wide gap p-type layered oxychalcogenides, LnCuOCh (Ln La, Pr and Nd; Ch S or Se); Appl. Phys. A, 79, 1521-1523, (2004).
• H. HIRAMATSU, K. UEDA, K. TAKAFUJI, H. OHTA, M. HIRANO, T. KAMIYA, and H. HOSONO: Heteroepitaxial growth of wide gap p-type semiconductors: LnCuOCh (Lr=La, Pr and Nd; Ch=S or Se) by reactive solid-phase epitaxy; Appl. Phys. A, 79, 1517-1520, (2004).
• T. SUGAWARA, W. FUTAKO, T. KAMIYA, and I. SHIMIZU: High electric field response of wide bandgap a-Si:H photodiodes probed by transient current measurements; J. Non-Cryst. Sol. 338-340, 802-805 (2004).

2003年

• Satoru Matsuishi, Yoshitake Toda, Masashi Miyakawa, Katsuro Hayashi, Toshio Kamiya, Masahiro Hirano, Isao Tanaka and Hideo Hosono: High Density Electron Anion in a Nano-porous Single Crystal: [Ca₂₄Al₂₈O₆₄]⁴⁺(4e^-); Science 301 (2003) 626.
• Kenji Nomura, Hiromichi Ohta, Kazushige Ueda, Toshio Kamiya, Masahiro Hirano and Hideo Hosono: Thin film transistor fabricated in single-crystalline transparent oxide semiconductor; Science 300 (2003) 1269-1272.
• Satoru Narushima, Kazushige Ueda, Hiroshi Mizoguchi, Hiromichi Ohta, Masahiro Hirano, Ken-ichi Shimizu, Toshio Kamiya and Hideo Hosono: P-type amorphous oxide semiconductor, ZnRh₂O₄, and room temperature fabrication of amorphous oxide P-N hetero-junction diodes; Adv. Mater. 15[17] (2003) 1409-1413.
• Takenobu Suzuki, Linards Skuja, Koichi Kajihara, Masahiro Hirano, Toshio Kamiya and Hideo Hosono: Electronic Structure of Oxygen Dangling Bond in Glassy SiO₂: The Role of Hyperconjugation; Phys. Rev. Lett. 90 (2003) 186404.
• Hidenori Hiramatsu, Kazushige Ueda, Hiromichi Ohta, Masahiro Hirano, Toshio Kamiya and Hideo Hosono: Degenerate p-type conductivity in wide-gap LaCuOS_1-xSe_x (x = 0 - 1) epitaxial films; Appl. Phys. Lett. 82 (2003) 1048-1050.
• K. Nomura, H.Ohta, K.Ueda, T.Kamiya, M.Hirano and H. Hosono: Fabrication of MISFET exhibiting normally-off characteristics using a single-crystalline InGaO₃(ZnO)₅ thin film; Mater. Res. Soc. Symp. Proc. 747 (2003) V2.6.
• Satoru Narushima, Hiroshi Mizoguchi, Hiromichi Ohta, Masahiro Hirano, Ken-ichi Shimizu, Kazushige Ueda, Toshio Kamiya and Hideo Hosono: X-ray Amorphous P-type Conductive Oxide; ZnRh₂O₄; Mater. Res. Soc. Symp. Proc. 747 (2003) V2.2.
• 平松秀典，太田裕道，植田和茂，平野正浩，細野秀雄: 自然超格子構造を有する透明半導体―エピタキシャル成長と光・電子物性―; 月刊ディスプレイ5月号 (2003) 78-83.
• 松石聡、林克郎、平野正浩、細野秀雄: ナノポーラス結晶12CaO・7Al₂O₃による活性酸素イオン、水素陰イオンおよび電子の包接; ゼオライト 20[3] (2003) 121-124.
• H. Hiramatsu, K. Ueda, H. Ohta, M. Hirano, T. Kamiya, and H. Hosono: Wide gap p-type degenerate semiconductor: Mg-doped LaCuOSe; Thin Solid Films 445 (2003) 304.
• Y. Toda, M. Miyakawa, K. Hayashi, T. Kamiya, M. Hirano, H. Hosono: Thin film fabrication of nano-porous 12CaO・7Al₂O₃ crystal and its conversion into transparent conductive films by light illumination; Thin Solid Films 445 (2003) 309.
• K. Nomura, H. Ohta, K. Ueda, T. Kamiy, M. Hirano, and H. Hosono: Electron transport in InGaO₃(ZnO)m(m=integer) studied using single-crystalline thin films and transparent MISFETs; Thin Solid Films 445 (2003) 322.

2002年

• 細野秀雄, 林克郎, 松石聡 and 平野正浩: ナノポーラス結晶 12CaO7Al2O3を舞台とした活性酸素のエンジニアリングとその応用; セラミックス 37 (2002) 968.
• M. Miyakawa, K. Ueda and H. Hosono: Carrier control in transparent semiconducting oxide thin films by ion implantation: MgIn₂O₄ and ZnO; Nuclear Instruments and Methods in Physics Research B 191 (2002) 173-177.
• M. Miyakawa, R. Noshiro, T. Ogawa, K. Ueda, H. Kawazoe, H. Ohta, M. Orita, M. Hirano and H. Hosono: Carrier doping into MgIn₂O₄ epitaxial thin films by proton implantation; J. Appl. Phys. 91 (2002) 2112.
• M. Miyakawa, H. Un'no, K. Ueda, H. Kawazoe and H. Hosono: Carrier generation in polycrystalline MgIn₂O₄ thin films by proton implantation; Phil. Mag. B 82 (2002) 1155-1162.
• Hiroshi Mizoguchi, Kazushige Ueda, Masahiro Orita, Sang-Chul Moon, Koichi Kajihara, Masahiro Hirano and Hideo Hosono: Decomposition of water by a CaTiO₃ photocatalyst under UV light irradiation; Mater. Res. Bull. 2115 (2002) 1-6.
• Yoshiaki Ikuta, Koichi Kajihara, Masahiro Hirano, Shinya Kikugawa and Hideo Hosono: Effects of H₂ impregnation on excimer-laser-induced oxygen-deficient center formation in synthetic SiO₂ glass; Appl. Phys. Lett. 80 (2002) 3916-3918.
• Hidenori Hiramatsu, Masahiro Orita, Masahiro Hirano, Kazushige Ueda and Hideo Hosono: Electrical conductivity control in transparent p-type (LaO)CuS thin films prepared by rf sputtering; J. Appl. Phys. 91 (2002) 9177-9181.
• Satoru Narushima, Masahiro Orita, Masahiro Hirano and Hideo Hosono: Electronic structure and transport properties in the transparent amorphous oxide semiconductor 2 CdO GeO₂; Phys. Rev. B 66 (2002) 035203.
• Hiroshi Yanagi, Kazushige Ueda, Hiromichi Ohta, Masahiro Orita, Masahiro Hirano and Hideo Hosono: Fabrication of all oxide transparent p-n homojunction using bipolar CuInO₂ semiconducting oxide with delafossite structure; Sol. State Comm. 121 (2002) 15-18.
• Hiroshi Mizoguchi, Masahiro Orita, Masahiro Hirano, Satoru Fujitsu, Tomonari Takeuchi and Hideo Hosono: NbO₂F: An oxyfluoride phase with wide band gap and electrochromic; Appl. Phys. Lett. 80 (2002) 4732-4734.
• Kenji Nomura, Hiromichi Ohta, Kazushige Ueda, Masahiro Orita, Masahiro Hirano and Hideo Hosono: Novel film growth technique of single crystalline In₂O₃(ZnO)_m (m=integer) homologous compound; Thin Solid Films 411 (2002) 147-151.
• Takenobu Suzuki, Masahiro Hirano and Hideo Hosono: Optical gaps of alkali borate and alkali fluoroborate glasses; J. Appl. Phys. 91 (2002) 4149.
• Hidenori Hiramatsu, Kazushige Ueda, Hiromichi Ohta, Masahiro Orita, Masahiro Hirano and Hideo Hosono: Preparation of transparent p-type (La_1-xSr_xO)CuS thin films by r.f.sputtering technique; Thin Solid Films 411 (2002) 125-128.
• 鳴島暁, 溝口拓, 折田政寛, 太田裕道, 平野正浩, 神谷利夫, 清水健一 and 細野秀雄: P型アモルファス酸化物の発見とアモルファス酸化物PN接合の形成; 第29回アモルファス物質の物性と応用セミナーテキスト (東京, 11/25-26, 2002)..
• Naoto Kikuchi, Hideo Hosono, Hiroshi Kawazoe, Osamu Tanegashima, Isao Ota and Yutaka Kimura: Transparent conducting oxide, InSbO₄ with random rutile structure; Vacuum 65 (2002) 81-84.
• Hiroshi Mizoguchi, Masahiro Hirano, Satoru Fujitsu, Tomonari Takeuchi, Kazushige Ueda and Hideo Hosono: ZnRh₂O₄: A p-type semiconducting oxide with a valence band composed of a low spin state of Rh³⁺ in a 4d⁶ configuration; Appl. Phys. Lett. 80 (2002) 1207-1209.

2001年

• Hiroshi Yanagi, Tomomi Hase, Shuntaro Ibuki, Kazushige Ueda and Hideo Hosono: Bipolarity in electrical conduction of transparent oxide semiconductor CuInO₂ with delafossite structure; Appl. Phys. Lett. 78 (2001) 1583-1585.
• Shin-ichiro Inoue, Kazushige Ueda and Hideo Hosono: Electronic structure of the transparent p-type semiconductor (LaO)CuS; Phys. Rev. B 64 (2001) 245211.
• Hiromichi Ohta, Masahiro Orita, Masahiro Hirano and Hideo Hosono: Fabrication and characterization of ultraviolet-emitting diodes composed of transparent p-n heterojunction, p-SrCu2O2 and n-ZnO; J. Appl. Phys. 89 (2001) 5720-5725.
• Hiromichi Ohta, Masahiro Orita, Masahiro Hirano and Hideo Hosono: Transparent Conducting Indium-Tin-Oxide Thin Film with Extremely Flatted Surface; Mater. Res. Soc. Symp. Proc. 666 (2001) F3.15.

2000年

• Haruo Kishimoto, Takahisa Omata, Shinya Otsuka-Yao-Matsuo, Kazushige Ueda, Hideo Hosono and Hiroshi Kawazoe: Crystal structure of metastable k-CeZrO phase possessing an ordered arrangement of Ce and Zr ions; Journal of Alloys and Compounds 312 (2000) 94-103.
• Hiromichi Ohta, Ken-ichi Kawamura, Masahiro Orita, Masahiro Hirano, Nobuhiko Sarukura and Hideo Hosono: Current injection emission from a transparent p・n junction composed of p-SrCu₂O₂/n-ZnO; Appl. Phys. Lett. 77 (2000) 475-477.
• Yoshiaki Ikuta, Shinya Kikugawa, Masahiro Hirano and Hideo Hosono: Defect formation and structural alternation in modified SiO₂ glasses by irradiation with F₂ laser or ArF excimer laser; J. Vac. Sci. Technol. B 18 (2000) 2891-2895.
• Hiroshi Yanagi, Shin-ichiro Inoue, Kazushige Ueda, Hiroshi Kawazoe, Hideo Hosono and Noriaki Hamada: Electronic structure and optoelectronic properties of transparent p-type conducting CuAlO₂; J. Appl. Phys. 88 (2000) 4159-4163.
• S. Narushima, H. Hosono, J. Jisun, T. Yoko and K. Shimakawa: Electronic transport and optical properties of proton-implanted amorphous 2CdO GeO₂ films; J. Non-Cryst. Sol. 274 (2000) 313-318.
• Hiromichi Ohta, Masahiro Orita, Masahiro Hirano, Hiroaki Tanji, Hiroshi Kawazoe and Hideo Hosono: Highly electrically conductive indium-tin-oxide thin films epitaxially grown on yttria-stabilized zirconia (100) by pulsed-laser deposition; Appl. Phys. Lett. 76 (2000) 2740-2742.
• Ken-ichi Kawamura, Nobuhiko Sarukura, Masahiro Hirano and Hideo Hosono: Holographic encoding of permanent gratings embedded in diamond by two beam interference of a single femtosecond near-infrared laser pulse; Jpn. J. Appl. Phys. 39 (2000) L767-L769.
• Takeru Kinoshita and Hideo Hosono: Materials design and example of long lasting phosphorescent glasses utilizing electron trapped centers; J. Non-Cryst. Sol. 274 (2000) 257-263.
• H. Mizoguchi, N. Kitamura, K. Fukumi, T. Mihara, J. Nishii, M. Nakamura, N. Kikuchi, H. Hosono and H. Kawazoe: Optical properties of SrMoO₃ thin film; J. Appl. Phys. 87 (2000) 4617-4619.
• Naoto Kikuchi, Eiji Kusano, Hidehito Nanto, Akira Kinbara and Hideo Hosono: Phonon scattering in electron transport phenomena of ITO Films; Vacuum 59 (2000) 492-499.
• Shuntaro Ibuki, Hiroshi Yanagi, Kazushige Ueda, Hiroshi Kawazoe and Hideo Hosono: Preparation of n-type conductive transparent thin films of AgInO₂ :Sn with delafossite-type structure by pulsed laser deposition; J. Appl. Phys. 88 (2000) 3067-3069.

1999年

• Noriaki Matsunami and Hideo Hosono: Bi-self-trapped-exciton model for Frenkel defect formation in amorphous SiO₂ by proton irradiation; Phys. Rev. B 60 (1999) 10616-10619.
• Yukihiro Morimoto, Shigenori Nozawa and Hideo Hosono: Effect of Xe₂^* light (7.2 eV) on the infrared and vacuum ultraviolet absorption properties of hydroxyl groups in silica glass; Phys. Rev. B 59 (1999) 4066-4073.
• H. Mizoguchi, K. Fukumi, N. Kitamura, T. Takeuchi, J. Hayakawa, H. Yamanaka, H. Yanagi, H. Hosono and H. Kawazoe: Electronic structure of polycrystalline AMoO₃ (A=Sr or Ba); J. Appl. Phys. 85 (1999) 6502.
• Atsushi Kudo, Hiroshi Yanagi, Kazushige Ueda, Hideo Hosono, Hiroshi Kawazoe and Yoshihiko Yano: Fabrication of transparent p-n heterojunction thin film diodes based entirely on oxide semiconductors; Appl. Phys. Lett. 75 (1999) 2851-2853.
• Masafumi Mizuguchi, Linards Skuja, Hideo Hosono and Tohru Ogawa: F-doped and H₂-impregnated synthetic SiO₂ glasses for 157 nm optics; J. Vac. Sci. Technol. B 17 (1999) 3280-3284.
• Masashi Miyakawa, Hideo Hosono and Hiroshi Kawazoe: Formation of hydrogen tungsten bronze by proton implantation; Mater. Res. Bull. 34 (1999) 115-121.
• Masashi Miyakawa, Hideo Hosono and Hiroshi Kawazoe: FORMATION OF HYDROGEN TUNGSTEN BRONZE BY PROTON IMPLANTATION; Mater. Res. Bull. 34 (1999) 115-121.
• Takeru Kinoshita, Masaaki Yamazaki, Hiroshi Kawazoe and Hideo Hosono: Long lasting phosphorescence and photostimulated luminescence in Tb-ion-activated reduced calcium aluminate glasses; J. Appl. Phys. 86 (1999) 3729-3733.
• Junji Nishii, Kenji Kintaka, Hideo Hosono, Hiroshi Kawazoe, Makie Kato and Ken-ichi Muta: Pair generation of Ge electron centers and self-trapped hole centers in GeO₂-SiO₂ glasses by KrF excimer-laser irradiation; Phys. Rev. B 60 (1999) 7166-7169.
• Masafumi Mizuguchi, Linards Skuja, Hideo Hosono and Tohru Ogawa: Photochemical processes induced by 157-nm light in H₂-impregnated glassy SiO₂:OH; Opt. Lett. 24 (1999) 863-865.
• H. Mizoguchi, H. Hosono, H. Kawazoe, M. Yasukawa, S. Fujitsu and K. Fukumi: Valance states of bismuth in new mixed-valence oxides: Bi_1-xY_xO_1.5+delta (x=0.4) by XANES; Mater. Res. Bull. 34 (1999) 373-379.
• H. Mizoguchi, H. Hosono, H. Kawazoe, M. Yasukawa, S. Fujitsu and K. Fukumi: VALENCE STATES OF BISMUTH IN NEW MIXED-VALENCE OXIDES: Bi_1-xY_xO_1.5+delta BY XANES; Mater. Res. Bulletin 34 (1999) 373-379.
• Masafumi Mizuguchi, Hideo Hosono and Hiroshi Kawazoe: Time-resolved photoluminescence for diagnosis of resistance to ArF excimer laser damage to CaF2 single crystals; J. Opt, Soc. Am. B: Optical Physics 16 (1999) 1153-1159.