■Publication list
■解説（国内出版）
■Invited (International Conference)
■Invited (国内会議)
Publication list
[2021年] |
--- | “Probabilistic imaginary-time evolution by using forward and backward real-time evolution with a single ancilla: first-quantized eigensolver of quantum chemistry for ground states" Taichi Kosugi, Yusuke Nishiya, and Yu-ichiro Matsushita, arXiv:2111.12471v1/1-14 (2021). | --- | “Effect of magnetocrystalline anisotropy on magnetocaloric properties of AlFe2B2 compound" Hung Ba Tran, Hiroyoshi Momida, Yu-ichiro Matsushita, Kazunori Sato, Yukihiro Makino, Koun Shirai, and Tamio Oguchi, arXiv:2112.08154/1-23 (2021). | --- | “Anisotropic magnetocaloric effect of CrI3: A theoretical study” Hung Ba Tran, Hiroyoshi Momida, Yu-ichiro Matsushita, Koun Shirai, and Tamio Oguchi, arXiv:2111.02063/1-9 (2021). | --- | “Impact of formation process on the radiation properties of single-photon sources generated on SiC crystal surfaces” Yasuto Hijikata, Shota Komori, Shunsuke Otojima, Yu-ichiro Matsushita, and Takeshi Ohshima, Applied Physics Letters 118, 204005/1-6 (2021). | --- | “Implementation of quantum imaginary-time evolution method on NISQ devices by introducing nonlocal approximation” Hirofumi Nishi, Taichi Kosugi, and Yu-ichiro Matsushita, npj Quantum Information 7, 85/1-7 (2021)arXiv:2005.12715/1-9 (2020). |
[2020年] |
--- | “Unraveling crystal symmetry and strain effects on electronic band structures of SiC polytypes” Yuichiro Kuroiwa, Yu-ichiro Matsushita, and Fumiyasu Oba, AIP Advances 10, 105014/1-9 (2020). |
| --- | “Design and formation of SiC(0001)/SiO2 interfaces via Si deposition followed by low-temperature oxidation and high-temperature nitridation” Takuma Kobayashi, Takafumi Okuda, Keita Tachiki, Koji Ito, Yu-ichiro Matsushita, and Tsunenobu Kimoto, Applied Physics Express 13, 091003/1-4 (2020). |
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| --- | “Search for the boron quasicrystal by first-principle-calculation” Takahiro Takahashi, Koichi Kitahara, Yukari Katsura, Junpei Okada, Yu-ichiro Matsushita, and Kaoru Kimura, Solid. State Sci. 7 106377/1-16 (2020). |
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| --- | “Linear-response functions of mol;ecules on a quantum computer: Charge and spin responses and optical absorption” Taichi Kosugi and Yu-ichiro Matsushita, Physical Review Research 2, 033043/1-16 (2020). | |
| --- | “Carbon dangling-bond center (carbon Pb center) at 4H-SiC(0001)/SiO2 interface” Takehide Umeda, Takuma Kobayashi, Mitsuru Sometani, Hitoshi Yano, Yu-ichiro Matsushita, and Shinsuke Harada, Applied Physics Letters 116, 071604/1-5 (2020). |
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| --- | “Construction of Green’s functions on a quantum computer: applications to molecular systems” Taichi Kosugi and Yu-ichiro Matsushita, Physical Review A 101, 012330/1-12 (2020). |
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[2019年] |
--- | “Wannier interpolation of one-particle Green’s functions from coupled-cluster singles and doubles (CCSD)” Taichi Kosugi and Yu-ichiro Matsushita, Journal of Chemical Physics 150, 114104/1-8 (2019). |
| --- | “Native point defects and carbon clusters in 4H-SiC: A hybrid functional study” Takuma, Kobayashi, Kou Harada, Yu Kumagai, Fumiyasu Oba, and Yu-ichiro Matsushita, Journal of Applied Physics 125, 125701/1-8 (2019). | |
| --- | “Theoretical prediction of strain-induced carrier effective mass modulation in 4H-SiC and GaN” Yuichiro Kuroiwa, Yu-ichiro Matsushita, Kou Harada, and Fumiyasu Oba, Applied Physics Letters 115, 112102/1-5 (2019). | |
| --- | “Energetics and electronic structure of native point defects in α-Ga2O3” Takuma Kobayashi, Tomoya Gake, Yu Kumagai, Fumiyasu Oba, and Yu-ichiro Matsushita, Applied Physics Express 12, 091001/1-4 (2019). | |
| --- | “Structure and energetics of carbon-related defects in SiC(0001)/SiO2 systems revealed by first-principles calculations: Defects in SiC, SiO2, and just at their interface” Takuma, Kobayashi and Yu-ichiro Matsushita, Journal of Applied Physics 126, 145302/1-8 (2019). | |
| --- | “A parallel computing method for the coupled-cluster singles and doubles” Takumi Yamashita, Taichi Kosugi, Yu-ichiro Matsushita, and Tetsuya Sakurai, arXiv:1911.00242/1-27 (2019). | |
[2018年] |
--- | “Oxygen-incorporated single-photon sources observed at the surface of silicon carbide crystals” Yasuto Hijikata, Takashi Horii, Yoritaka Furukawa, Yu-ichiro Matsushita, and Takeshi Ohshima, Journal of Physics Communications 2, 111003/1-7 (2018). |
| --- | “One-particle Green's function of interacting two electrons using exact solutions for a three-electron system: comparison with exact Kohn-Sham system” Taichi Kosugi and Yu-ichiro Matsushita, Journal of Physics: Condensed Matter 30, 435604/1-14 (2018). | |
| --- | “Structural determination of phosphosilicate glass based on first-principles molecular dynamics calculation” Takuma Kobayashi, Yu-ichiro Matsushita, Tsunenobu Kimoto, and Atsushi Oshiyama, Japanese Journal of Applied Physics 58, 011001/1-4 (2018). | |
| --- | “Structural stability and energy levels of carbon-related defects in amorphous SiO2 and its interface with SiC” Yu-ichiro Matsushita and Atsushi Oshiyama, Japanese Journal of Applied Physics 57, 125701/1-5 (2018). | |
| --- | “First-principles study of oxygen-related defects on 4H-SiC surface: The effects of surface amorphous structure” Yu-cihiro Matsushita, Yoritaka Furukawa, Yasuto Hijikata, and Takeshi Ohshima, Applied Surface Science 464, 451-454 (2018). | |
| --- | “Quasiparticle energy spectra of isolated atoms from coupled-cluser singles and doubles (CCSD): Comparison with exact CI calculations” Hirofumi Nishi, Taichi Kosugi, Yoritaka Furukawa, and Yu-ichiro Matsushita, The Journal of Chemical Physics 149, 034106/1-8 (2018). | |
| --- | “Comparison of Green’s functions for transition metal atoms using self-energy functional theory and coupled-cluster singles and doubles (CCSD)” Taichi Kosugi, Hirofumi Nishi, Yoritaka Furukawa, and Yu-ichiro Matsushita, The Journal of Chemical Physics 148, 224103/1-10 (2018). | |
| --- | “Band structures in coupled-cluster singles-and-doubles Green’s function (GFCCSD)” Yoritaka Furukawa, Taichi Kosugi, Hirofumi Nishi, and Yu-ichiro Matsushita, The Journal of Chemical Physics 148, 204109/1-8 (2018). | |
| --- | “First-Principles Prediction of Densities of Amorphous Materials: The case of Amorphous Silicon” Yoritaka Furukawa and Yu-ichiro Matsushita, Journal of the Physical Society of Japan 87, 024701/1-5 (2018). | |
| --- | “Unfolding energy spectra of double-periodicity two-dimensional systems: Twisted bilayer graphene and MoS2 on graphene” Yu-ichiro Matsushita, Hirofumi Nishi, Jun-ichi Iwata, Taichi Kosugi, and Atsushi Oshiyama, Physical Review Materials 2, 010801(R) /1-5 (2018). | |
[2017年] |
--- | “Mining single-electron spectra of the interface states from a supercell band structure of silicone on an Ag(111) substrate with band-unfolding methodology” Jun-Ichi Iwata, Yu-ichiro Matsushita, Hirofumi Nishi, Zhi-Xin Guo, and Atsushi Oshiyama, Physical Review B 96, 235442/1-10 (2017). |
| --- | “Microscopic Mechanism of Carbon Annihilation upon SiC Oxidation due to Phosphorous Treatment: Density-Functional Calculations Combined with Ion Mass Spectroscopy” Takuma Kobayashi, Yu-ichiro Matsushita, Takafumi Okuda, Tsunenobu Kimoto, and Atsushi Oshiyama, Applied Physics Express 11, 121301/1-4 (2017). | |
| --- | “Periodicity-free unfolding method of electronic energy spectra: Application to twisted bilayer graphene” Taichi Kosugi, Hirofumi Nishi, Yasuyuki Kato, and Yu-ichiro Matsushita, Journal of the Physical Society of Japan 86, 124717/1-8 (2017). | |
| --- | “Quantum Singwi-Tosi-Land-Sjolander approach for interacting inhomogeneous systems under electromagnetic fields: Comparison with exact results” Taichi Kosugi and Yu-ichiro Matsushita, The Journal of Chemical Physics 147, 114105/1-15 (2017). | |
| --- | “A novel intrinsic interface state controlled by atomic stacking sequence at interfaces of SiC/SiO2” Yu-ichiro Matsushita and A. Oshiyama, Nano Letters 17, 6458-6463 (2017). | |
| --- | “First-principles approach on defect structures in amorphous Silicon” Yoritaka Furukawa and Yu-ichiro Matsushita, Journal of Non-Crystalline Solids, 473, 64-73 (2017). | |
| --- | “L10 stacked binaries as candidates for hard magnets: FePt, MnAl and MnGa” Yu-ichiro Matsushita, Galia Madjarova, Jos'e A. Flores-Livas, J. K. Dewhurst, C. Felser, S. Sharma, E.K. U. Gross, Annalen der Physik, 529, 1600412/1-6 (2017). | |
| --- | “Comprehensive study on band-gap variations in sp3-bonded semiconductors: roles of electronic states floating in internal space” Yu-ichiro Matsushita and Atsushi Oshiyama, Journal of Physical Society of Japan, 86 054702/1-7 (2017). | |
| --- | “First-principles calculations that clarify energetics and reactions of oxygen adsorption and carbon desorption on 4H-SiC (11-20) surface” Han Li, Yu-ichiro Matsushita, Mauro Boero, and Atsushi Oshiyama, Journal of Physical Chemistry C, 121 3920-3928 (2017). | |
| --- | “Band-unfolding approach to Moire-induced band-gap opening and Fermi-level-velocity reduction in twisted bilayer graphene” Hirofumi Nishi, Yu-ichiro Matsushita, and Atsushi Oshiyama, Physical Review B, 95 085420/1-8 (2017). | |
| --- | “Large magnetocrystalline anisotropy in tetragonally distorted Heuslers: a systematic study.” Yu-ichiro Matsushita, G. Madjarova, J. K. Dewhurst, S. Shallcross, C. Felser, S. Sharma, and E. K. U. Gross, Journal of Physics D: Applied Physics, 50, 095002/1-8 (2017). | |
[2016年] |
--- | “Mechanisms of initial oxidation of 4H-SiC (0001) and (000-1) surfaces unraveled by first-principles calculations” Yu-ichiro Matsushita, and Atsushi Oshiyama, arXiv 1612.00189/1-28 (2016). |
[2015年] |
--- | “Large-Scale Real-Space Density-Functional Calculations: Moire-Induced Electron Localization in Graphene” Atsushi Oshiyama, Jun-Ichi Iwata, Kazuyuki Uchida, and Yu-ichiro Matsushita, Journal of Applied Physics, 117, 112811/1-5 (2015).【Editor’s select】 |
| --- | “Momentum microscopy of the layered semiconductor TiS2 and Ni intercalated Ni1/3TiS2” Shigemasa Suga, Christian Tusche, Yu-ichiro Matsushita, Martin Ellguth, Akinori Irizawa and Jürgen Kirschner, New Journal of Physics, 17, 083010/1-10 (2015). |
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[2014年] |
--- | “Electron Confinement due to Stacking Control of Atomic Layers in SiC Polytypes: Roles of Floating States and Spontaneous Polarization” Yu-ichiro Matsushita, Shinnosuke Furuya, and Atsushi Oshiyama, Journal of Physical Society of Japan, 83, 094713/1-5 (2014). |
| --- | “Interstitial Channels that Control Band Gaps and Effective Masses in Tetrahedrally Bonded Semiconductors” Yu-ichiro Matsushita, and Atsushi Oshiyama, Physical Review Letters, 112, 136403/1-5 (2014). |
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[2012年] |
--- | “Floating Electron States in Covalent Semiconductors” Yu-ichiro Matsushita, Shinnosuke Furuya, and Atsushi Oshiyama, Physical Review Letters 108, 246404/1-5 (2012). |
[2011年] |
--- | “Comparative Study of Hybrid Functionals Applied to Structural and Electronic Properties of Semiconductors and Insulators“ Yu-ichiro Matsushita, Kazuma Nakamura, and Atsushi Oshiyama, Physical Review B 84, 075205/1-13 (2011). |
解説（国内出版）
[2021年] |
--- | “炭素欠陥制御に基づくSiC/SiO2界面の高品質化” 小林拓真, 奥田貴史, 立木馨大, 伊藤滉二, 松下雄一,木本恒暢, 信学技報, vol. 121, no. 235, SDM2021-60, pp. 38-42, (2021). |
[2017年] |
--- | “実空間差分法による大規模計算：半導体表面・ナノ構造への応用” 岩田潤一, 松下雄一郎, 澤田啓介, 重田育照, 押山淳, 固体物理 (2017). |
[2012年] |
--- | “Computer Simulations of Silicon Nanowires and its Visualization with π-CAVE System (シリコンナノワイヤのシミュレーションとπ-CAVEシステムによる可視化)” 古家真之介, 岩田潤一, 長谷川幸弘, 松下雄一郎, 押山淳, 賀谷信幸, 可視化情報学会誌, (2012). |
Invited (International Conference)
[2021年] |
--- | “Reduction of interface state density in the SiC MOS structures by a non-oxidation process” Tsunenobu Kimoto, Keita Tachiki, Takuma Kobayashi, and Yu-ichiro Matsushita, 2021 International Conference on Solid State Devices and Materials (virtual, 2021). |
| --- | (Keynote talk) “An-intio studies on SiC/SiO2: identification of interface states and a theoretical approach to reduce the interface-state density” Yu-ichiro Matsushita, International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021, Online (2021). | |
| --- | “Theoretical study for Reduction of Interface State Density in SiC-MOSFETs” Yu-ichiro Matsushita, International Meeting on Thin Film Interfaces and Composite Crystals, Okayama (2021). | |
[2018年] |
--- | “Quasiparticle spectra based on wave function theory: Application of coupled-cluster theory and self-energy functional theory” Yu-ichiro Matsushita, 21st Asian Workshop on First-Principles Electronic Structure Calculations (ASIAN-21), Korea (2018). |
[2017年] |
--- | “Floating Electron states in SiC and its impact on the SiC electronic devices” Yu-ichiro Matsuhsita 2017 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES, Nara (2017). |
[2012年] |
--- | “Floating States and Band-Gap Variation in Semiconductors“ Yu-ichiro Matsushita, 15th Asian Workshop on First-Principles Electronic Structure Calculations (ASIAN-15), Taiwan (2012). |
Invited (国内会議)
[2021年] |
--- | “炭素欠陥制御に基づくSiC/SiO2界面の高品質化” 小林拓真、奥田貴史、立木馨大、伊藤滉二、松下雄一郎、木本恒暢、令和3年11月度電子情報通信学会 (SDM) 研究会 (オンライン, 2021). |
[2019年] |
--- | “連結クラスター理論による準粒子スペクトル計算：古典と量子コンピュータ上での実装と適用” 松下雄一郎、小杉太一、第29回日本MRS年次大会、神奈川 2019年11月 |
[2017年] |
--- | “SiC/SiO2界面における電子状態とそのデバイスへの影響” 松下雄一郎、 企業研究会、第30期CAMMフォーラム、 東京 2017年2月 |
[2016年] |
--- | “萌芽的課題紹介” 松下雄一郎、重点課題(7)シンポジウム ``Creation of new functional devices and high-performance materials to support next-generation industries(CDMSI)” 千葉 2016年12月 |
[2014年] |
--- | “共有結合性半導体におけるチャネル構造とその電子物性(バンドギャップと有効質量)との関係” 松下雄一郎、第74回応用物理学会春季学術講演会、 東京2014年3月 |
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