Selected Papers
Review
- H.
HOSONO: Built-in Nanostructures in Transparent Oxides for Novel Photonic and
Electronic functions Materials; Int. J. Appl.Ceram.Technol,. 1[2],
106-118(2004)
Transparent Oxide Semiconductors (TOS) and Devices
Review
- H.
OHTA and H. HOSONO: Transparent Oxide Optoelectronics; Material Today,
June(2004)
- Hiromichi Ohta, Kenji
Nomura, Hidenori Hiramatsu, Kazushige Ueda, Toshio Kamiya, Masahiro Hirano,
Hideo Hosono, Frontier of transparent oxide semiconductors, Solid-State Electronics 47, 2261-2267(2003)
Transparent Oxide Semiconductors and Devices
- Finding of bipolar TOS CuInO2
Hiroshi Yanagi, Tomomi Hase, Shuntaro Ibuki, Kazushige Ueda and Hideo Hosono: Bipolarity in electrical conduction of transparent oxide
semiconductor CuInO2 with delafossite structure; Appl.
Phys. Lett. 78 (2001) 1583-1585.
- Finding of a new p-type TOS ZnRh2O4
Hiroshi Mizoguchi, Masahiro Hirano, Satoru Fujitsu, Tomonari Takeuchi,
Kazushige Ueda and Hideo Hosono: ZnRh2O4: A p-type
semiconducting oxide with a valence band composed of a low spin state of Rh3+
in a 4d6 configuration; Appl. Phys. Lett. 80
(2002) 1207-1209.
- Finding of the first p-type TOS
P-Type Electrical Conduction in Transparent Thin Film of CuAlO2,
Hiroshi KAWAZOE, Masahiro YASUKAWA, Hiroyuki HYODO, Masaaki KURITA, Hiroshi
YANAGI, and Hideo HOSONO, Nature, 389, 939-942(1997)
Hiroshi Yanagi, Shin-ichiro Inoue, Kazushige Ueda, Hiroshi Kawazoe, Hideo
Hosono and Noriaki Hamada: Electronic structure and optoelectronic
properties of transparent p-type conducting CuAlO2; J.
Appl. Phys. 88 (2000) 4159-4163.
- Atomically flat ITO film exhibiting the
largest electrical conductivity
Hiromichi Ohta, Masahiro Orita, Masahiro Hirano, Hiroaki Tanji, Hiroshi
Kawazoe and Hideo Hosono: Highly electrically conductive indium-tin-oxide
thin films epitaxially grown on yttria-stabilized zirconia (100) by
pulsed-laser deposition; Appl. Phys. Lett. 76 (2000)
2740-2742.
H. OHTA, M. ORITA, M. HIRANO, and H. HOSONO: Surface morphology and crystal
quality of low resistive indium tin oxide grown on yttria-stabilized
zirconia ;Journal of Applied Physics, 91, 3547(2002)
- Very wide bandgap TOS Ga2O3
Deep ultraviolet transparent electroconductive b-Ga2O3
thin films: M.Orita, H.Ohta, M.Hirano and H.Hosono, Appl.Phys.Lett., 77,
4166(2000)
P/N junction devices
- ZnRh2O4/ZnO p/n junction
Fabrication and characterization of heteroepitaxial p-njunction diode
composed of wide-gap oxide semiconductors p-ZnRh2O4 '
n-ZnO: Hiromichi Ohta, Hiroshi Mizoguchi, and Masahiro Hirano, Satoru
Narushima, Toshio Kamiya and Hideo Hosono, Appl.Phys.Lett., 82[5],
823-25(2003)
- TOS p/n homojunction
Hiroshi Yanagi, Kazushige Ueda, Hiromichi Ohta, Masahiro Orita, Masahiro
Hirano and Hideo Hosono: Fabrication of all oxide transparent p-n
homojunction using bipolar CuInO2 semiconducting oxide with
delafossite structure; Sol. State Comm. 121 (2002) 15-18.
- Electron injection UV-light emission from TOS p/n
junction
H.Ohta, K.Kawamura, N.Sarukura, M.Orita, M.Hirano and
H.HosonoFabrication of UV-Light Emitting Diode Using Transparent Conductive
Oxides, Appl.Phys.Lett., 77,475(2000)
Hiromichi Ohta, Ken-ichi Kawamura, Masahiro Orita, Masahiro Hirano,
Nobuhiko Sarukura and Hideo Hosono: Current injection emission from a
transparent p/n junction composed of p-SrCu2O2/n-ZnO;
Appl. Phys. Lett. 77 (2000) 475-477.
Hiromichi Ohta, Masahiro Orita, Masahiro Hirano and Hideo Hosono: Fabrication
and characterization of ultraviolet-emitting diodes composed of transparent
p-n heterojunction, p-SrCu2O2 and n-ZnO; J. Appl. Phys. 89
(2001) 5720-5725.
UV Emitting Diode Composed of Transparent Oxide Semiconductors:
p-SrCu2O2/n-ZnO: H.Ohta, K.Kawamura, N.Sarukura,
M.Orita, M.Hirano and H.Hosono, Electronics Letters, 36,
984(2000)
- TOS p/n junction
Atsushi Kudo, Hiroshi Yanagi, Kazushige Ueda, Hideo Hosono, Hiroshi
Kawazoe and Yoshihiko Yano: Fabrication of transparent p-n heterojunction
thin film diodes based entirely on oxide semiconductors; Appl. Phys.
Lett. 75 (1999) 2851-2853.
Amorphous TOS
- p-type amorphous TOS
Satoru Narushima, Kazushige Ueda, Hiroshi Mizoguchi, Hiromichi Ohta,
Masahiro Hirano, Ken-ichi Shimizu, Toshio Kamiya and Hideo Hosono: P-type
amorphous oxide semiconductor, ZnRh2O4, and room
temperature fabrication of amorphous oxide P-N hetero-junction diodes; Adv.
Mater. 15[17] (2003) 1409-1413.
- Mechanism of electronic conduction in amorphous TOS
Satoru Narushima, Masahiro Orita, Masahiro Hirano and Hideo Hosono: Electronic
structure and transport properties in the transparent amorphous oxide
semiconductor 2 CdO GeO2; Phys. Rev. B 66
(2002) 035203.
M. ORITA, H. OHTA, M. HIRANO, S. NARUSHIMA and H. HOSONO : Amorphous
transparent conductive oxide, InGaO3(ZnO)m (m=4) : Zn4s
conductor ;@Philo. Mag.B., 81, 501-515(2001)
Homologous series compounds
- High-performance Transparent Field Effect Transistor
Kenji Nomura, Hiromichi Ohta, Kazushige Ueda, Toshio Kamiya, Masahiro
Hirano and Hideo Hosono: Thin film transistor fabricated in
single-crystalline transparent oxide semiconductor; Science 300
(2003) 1269-1272.
- Mechanism of carrier transport in InGaO3(ZnO)m
K. Nomura, H. Ohta, K. Ueda, T. Kamiy, M. Hirano, and H. Hosono: Electron
transport in InGaO3(ZnO)m(m=integer) studied using
single-crystalline thin films and transparent MISFETs; Thin Solid
Films 445 (2003) 322.
- Reactive Solid-Phase Epitaxy
Single-Crystalline Films of the Homologous Series InGaO3(ZnO)mGrown
by Reactive Solid-Phase Epitaxy: H.Ohta, K.Nomura, M.Orita, M.Hirano, K.Ueda,
T.Suzuki, Y.Ikuhara and H.Hosono; Adv.Funct.Mater., 13[2],
139-44(2003)
Kenji Nomura, Hiromichi Ohta, Kazushige Ueda, Masahiro Orita, Masahiro
Hirano and Hideo Hosono: Novel film growth technique of single
crystalline In2O3(ZnO)m (m=integer)
homologous compound; Thin Solid Films 411 (2002) 147-151.
Layered Oxychalcogenides
- Fabrication process of epitaxial films of layered
oxychalcogenides
H. HIRAMATSU, H. OHTA, T. SUZUKI, C. HONJO, Y. IKUHARA, K. UEDA, T. KAMIYA,
M. HIRANO, and H. HOSONO: Mechanism for Heteroepitaxial Growth of
Transparent P-Type Semiconductor: LaCuOS by Reactive Solid-Phase Epitaxy; Crystal
Growth & Design, 4[2], 301-307(2004)
Hidenori HIRAMATSU, Kazushige UEDA, Hiromichi OHTA, Masahiro ORITA,
Masahiro HIRANO and Hideo HOSONO: Heteroepitaxial Growth of a Wide-Gap
P-type Semiconductor, LaCuOS; Appl.Phys.Lett., 81,
598-600(2002)
- Electronic structure of layered oxychalcogenides
K.
UEDA, H. HIRAMATSU, H. OHTA, M. HIRANO, T. KAMIYA, and H. HOSONO:
Single-atomic-layered quantum wells built in wide-gap semiconductors LnCuOCh
(Ln=lanthanide, Ch=chalcogen); Phys. Rev., B 69, 155305(2004)
Shin-ichiro Inoue, Kazushige Ueda and Hideo Hosono: Electronic
structure of the transparent p-type semiconductor (LaO)CuS; Phys.
Rev. B 64 (2001) 245211.
- Non-linear optical properties in layered
oxychalcogenides
H.
KAMIOKA, H. HIRAMATSU, H. OHTA, M. HIRANO, K. UEDA, T. KAMIYA, and H. HOSONO:
Third-order optical nonlinearity originating from room-temperature exciton
in layered compounds LaCuOS and LaCuOSe; Applied Physics Letters, 84[6],
879-882(2004)
- Room-temperature exciton and photoluminescence in
layered oxychalcogenides
Hidenori Hiramatsu, Kazushige Ueda, Kouhei Takafuji, Hiromichi Ohta,
Masahiro Hirano, Toshio Kamiya, and Hideo Hosono: Intrinsic excitonic
photoluminescence and band-gap engineering of wide-gap p-type
oxychalcogenide epitaxial films of LnCuOCh (Ln=La, Pr, and Nd; Ch=S or Se)
semiconductor alloys; J. Appl. Phys., 94[9], 5805-5808 (2003)
K. UEDA, S. INOUE, N. SARUKURA, M. HIRANO and H. HOSONO
:Room-temperature excitons in wide-gap layered-oxysulfide semiconductor:
LaCuOS ;@Appl. Phys. Lett., 78, 2333(2001)
- Degenerate p-type conduction in LaCuOSe:Mg
Hidenori Hiramatsu, Kazushige Ueda, Hiromichi Ohta, Masahiro Hirano,
Toshio Kamiya and Hideo Hosono: Degenerate p-type conductivity in
wide-gap LaCuOS1-xSex (x = 0 - 1) epitaxial films;
Appl. Phys. Lett. 82 (2003) 1048-1050.
- Transparent p-type semiconductor: LaCuOS layered oxysulfide:@K. Ueda, S.
Inoue, S. Hirose, H. Kawazoe, and H. Hosono, Appl. Phys. Lett., 77,
2701 (2000)
C12A7
- Field
electron emission from C12A7:e-
and application to FED
Y.
TODA, S. MATSUISHI, K. HAYASHI, K. UEDA, T. KAMIYA, M. HIRANO, and H. HOSONO:
Field emission of electron anions clathrated in subnanometer-sized cages of
[Ca24Al28O64]4+(4e-);
Adv. Mater ., 16, 685-689 (2004)
Organic semiconductors
- Organic
FET
H.
OHTA, T. KAMBAYASHI, K. NOMURA, M. HIRANO, K. ISHIKAWA, H. TAKEZOE, and H.
HOSONO: Transparent organic thin-film transistor with a laterally grown
non-planar phthalocyanine channel; Advanced Materials, 16[4],
312-316(2004)
- Organic
epitaxial film
Hiromichi Ohta, Takuya Kambayashi, Masahiro Hirano, Hajime
Hoshi, Ken Ishikawa, Hideo Takezoe, and Hidio Hosono: Application of a
Transparent Conductive Substrate with and Atomically Flat and Stepped
Surface to Lateral Growth of an Organic Molecule: Vanadyl Phthalocyanine; Advanced
Materials, 15[15], 1258-1262(2003)
C12A7
- Field
electron emission from C12A7:e-
and application to FED
Y.
TODA, S. MATSUISHI, K. HAYASHI, K. UEDA, T. KAMIYA, M. HIRANO, and H. HOSONO:
Field emission of electron anions clathrated in subnanometer-sized cages of
[Ca24Al28O64]4+(4e-);
Adv. Mater ., 16, 685-689 (2004)
- Creation
of inorganic electride C12A7:e-
Satoru Matsuishi, Yoshitake Toda, Masashi Miyakawa, Katsuro Hayashi,
Toshio Kamiya, Masahiro Hirano, Isao Tanaka and Hideo Hosono: High
Density Electron Anion in a Nano-porous Single Crystal: [Ca24Al28O64]4+(4e-);
Science 301 (2003) 626.
- High-density
O- radicals in C12A7
K.HAYASHI, M. HIRANO, S. MATSUISHI, and H. HOSONO :
Microporous crystal 12CaOE7Al2O3 encaging abundant
O- radicals ; J.Amer.Chem.Soc., 124, 738(2002)
K. Hayashi, S. Matsuishi, N. Ueda, M. Hirano and H. Hosono, Maximum
Incorporation of Oxygen Radicals O- and O2-,
into 12CaOE7Al2O3 with a Nanoporous Structure, Chem.
Mater., 15, 1851-54(2003)
- O-
emission from C12A7
Quanxin.LI, Katsuro HAYASHI, M. NISHIOKA, H.KASHIWAGI,
Masahiro HIRANO, Y.TORIMOTO, Hideo HOSONO, and M. SDAKATA: Absolute emission
current density of O|from 12CaOE7Al2O3 crystal; Appl.Phys.Lett.,
80, 4259(2002)
Quanxin Li, Katsuro HAYASHI, Masateru NISHIOKA, Hideo KASHIWAGI, Masahiro
HIRANO, Yoshifumi TORIMOTO, Hideo HOSONO, and Masayoshi SADAKATA:
Reproducibility of O- Negative Ion Emission from C12A7
Crystal Surface; Jpn.J.Appl.Phys., 41, L530(2002)
Katsuro HAYASHI, Masahiro HIRANO, Quanxin LI, M. NISHIOKA, M. SADAKATA, Y.
TORIMOTO, Satoru MATSUISHI, and@Hideo HOSONO: Electric Field Emission of
High Density O- Ions from 12CaO~7Al2O3 Engineered to
Incorporate Oxygen Radicals; Electrochemical and Solid State Lett., 5,
1(2002)
- Mechanism
of electronic conduction in conductive C12A7
Peter V. Sushko, Alexander L. Shluger, Katsuro Hayashi,
Masahiro Hirano, and Hideo Hosono: Electron Localization and a Confined
Electron Gas in Nanoporous Inorganic Electrides; Physical Review Letters,
91[12], 126401-1~4(2003)
- Thin
film formation of conductive C12A7
Masashi Miyakawa, Katsuro Hayashi, Masahiro Hirano, Yoshitake
Toda, Toshio Kamiya, and Hideo Hosono: Fabrication of Highly Conductive
12CaOE7Al2O3 Thin Films Encaging Hydride ions by
Proton Inplatation; Adv. Mater, 15[13]1100-1102(2003)
- Single-crystal
growth of C12A7
S. WATAUCHI, I. TANAKA, K. HAYASHI, M. HIRANO, and H. HOSONO :
Crystal growth of Ca12Al14O33 by the
floating zone method ; J.Cryst.Growth, 237, 496-502 (2002)
- Translucent
ceramics of C12A7
Katsuro HAYASHI, Masahiro HIRANO, and Hideo HOSONO:
Translucent ceramics of 12CaOE7Al2O3 with
microporous structure; J.Mater.Res., 17, 1244(2002)
- Electronic
conductor conversion of C12A7:H-
Katsuro HAYASHI, Satoru MATSUISHI, Toshio KAMIYA, Masahiro
HIRANO, and Hideo HOSONO, Light-induced conversion of refractory oxide into
persistent electronic conductor; Nature, 419, 462~465(2002)
Femto-second laser processing, Optical applications
- DFB
laser fabricated by femto-second pulses in LiF crystal
K.
KAWAMURA, M. HIRANO, T. KUROBORI, D. TAKAMIZU, T. KAMIYA, and H. HOSONO:
Femtosecond-laser-encoded distributed- feedback color center laser in
lithium fluoride single crystals ; Applied Physics Letters, 84[3],
331-313(2004)
- Fabrication
of periodic nanostructures by femto-second laser pulses in transparent
materials
Ken-ichi KAWAMURA, Toshio KAMIYA, Masahiro HIRANO, and Hideo
HOSONO: Holographic writing of volume-type microgratings in silica glass by
a single chirped laser pulse; Appl.Phys.Lett., 81,
1137-1139(2002)
Ken-ichi Kawamura, Nobuhiko Sarukura, Masahiro Hirano and Hideo Hosono: Holographic
encoding of permanent gratings embedded in diamond by two beam interference
of a single femtosecond near-infrared laser pulse; Jpn. J. Appl.
Phys. 39 (2000) L767-L769.
- Fabrication
of periodic nanostructures by femto-second laser pulses at surfaces of
transparent materials
H.Kamioka, T. Miura, K. Kawamura, M. Hirano, and H. Hosono:
Fine-pitched microgratings encoded by interference of UV femtosecond laser
pulses; J.Nanoscience & Nanotech. 2, 321-322(2002)
Ken-ichi.KAWAMURA, Eiji MOTOMOTSU, Masahiro HIRANO, and Hideo HOSONO:
Formation of Microstructure in SiO2 Thin Film by a Femtosecond
Laser Pulse; Jpn.J.Appl.Phys., 41, 4400-4403(2002)
K. KAWAMURA, N.SARUKURA, M. HIRANO, and H. HOSONO : Holographic encoding of
fine-pitched micrograting structures in amorphous SiO2 thin films
by a single femtosecond laser pulse ;@Appl.Phys.Lett., 78,
1038(2001)
K. KAWAMURA, N. SARUKURA, M. HIRANO and H. HOSONO : Periodic nano-structure
array in crossed holographic gratings on silica glass by interferred two
infrared femtosecond laser pulses ; @Appl.Phys.Lett., 79,
1228-1230(2001)
Fabrication of Surface Relief Gratings on Transparent Dielectric Materials
by Two-beam Holographic method using infrared femtosecond laser pulses:
K.Kawamura, T.Ogawa, N.Sarukura, M.Hirano and H.Hosono, Appl.Phys.B, 71,
119(2000)
Holographic Encoding of Permanent Gratings Embedded in Diamond by Two Beam
Interference of a Single Femtosecond Near-infrared Laser Pulse: K.Kawamura,
N.Sarukura, M.Hirano, and H.Hosono, @Jpn.J.Appl.Phys., (express
letter) 39, L767(2000)
- Technique
for adjusting femtosecond laser pulses
K. KAWAMURA, N. ITO, N. SARUKURA, M. HIRANO, and H. HOSONO :
New adjustment technique for time coincidence of femtosecond laser pulses
using third harmonic generation in air and its application to holograph
encoding system ; Rev.Sci.Instr., 73, 1711-4(2002)
SiO2
- K.
KAJIHARA, L. SKUJA, M. HIRANO, and H. HOSONO: Role of Mobile Interstitial
Oxygen Atoms in Defect Processes in Oxides: Interconversion between
Oxygen-Associated Defects in SiO2 Glass; Physical Review
Letters, 92[1], 015504-1(2004)
- Y.
IKUTA, K. KAJIHARA, M. HIRANO, and H. HOSONO: Correlation between
oxygen-deficient center formation and volume compaction in synthetic SiO2
glass upon ArF or F2 excimer-laser irradiation; Appl. Opt.,
43[11], 2332(2004)
- Structural alternation and defect formation in SiO2 glasses by
F2 excimer laser irradiation: K. Kajihara, Y. Ikuta, M. Hirano
and H. Hosono; Phys. Chem. Glasses, 43 [3], 137-40(2002)
- Takenobu Suzuki, Linards Skuja, Koichi Kajihara, Masahiro Hirano, Toshio
Kamiya and Hideo Hosono: Electronic Structure of Oxygen Dangling Bond in
Glassy SiO2: The Role of Hyperconjugation; Phys. Rev. Lett.
90 (2003) 186404.
- Electronic structure of oxygen dangling bond in glassy SiO2:
T.Suzuki, L.Skuja, K.Kajihara, M.Hirano, T.Kamiya, and H.Hosono; the role of
hyperconjugation, Physical Review Letters, 90,
186404-1~4(2003)
- Yoshiaki Ikuta, Koichi Kajihara, Masahiro Hirano, Shinya Kikugawa and
Hideo Hosono: Effects of H2 impregnation on excimer-laser-induced
oxygen-deficient center formation in synthetic SiO2 glass; Appl.
Phys. Lett. 80 (2002) 3916-3918.
- Takenobu Suzuki, Masahiro Hirano and Hideo Hosono: Optical gaps of
alkali borate and alkali fluoroborate glasses; J. Appl. Phys. 91
(2002) 4149.
- Yoshiaki Ikuta, Shinya Kikugawa, Masahiro Hirano and Hideo Hosono: Defect
formation and structural alternation in modified SiO2 glasses by
irradiation with F2 laser or ArF excimer laser; J. Vac.
Sci. Technol. B 18 (2000) 2891-2895.
- Masafumi Mizuguchi, Linards Skuja, Hideo Hosono and Tohru Ogawa: F-doped
and H2-impregnated synthetic SiO2 glasses for 157 nm
optics; J. Vac. Sci. Technol. B 17 (1999) 3280-3284.
- Junji Nishii, Kenji Kintaka, Hideo Hosono, Hiroshi Kawazoe, Makie Kato and
Ken-ichi Muta: Pair generation of Ge electron centers and self-trapped
hole centers in GeO2-SiO2 glasses by KrF excimer-laser
irradiation; Phys. Rev. B 60 (1999) 7166-7169.
- Masafumi Mizuguchi, Linards Skuja, Hideo Hosono and Tohru Ogawa: Photochemical
processes induced by 157-nm light in H2-impregnated glassy SiO2:OH;
Opt. Lett. 24 (1999) 863-865.
- H. HOSONO, Y. IKUTA, T. KINOSHITA, K.KAJIHARA, and M. HIRANO : Physical
disorder and optical properties in the vaccum ultraviolet region of
amorphous SiO2 ; Phys.Rev.Lett., 87, 175501(2001)
- Yoshiaki IKUTA, Kou-ichi KAJIHARA, Masahiro HIRANO, Shinya KIKUGAWA, and
Hideo HOSONO: Efects of H2 impregnation on excimer-laser-induced
oxygen-deficient center formation in synthetic SiO2 glass; Appl.Phys.Lett.,
80, 3916(2002)
- Koichi KAJIHARA, Linards SKUJA, Masahiro HIRANO, and Hideo HOSONO:
Diffusion and Reaction of Hydrogen in F2-laser-irradiated SiO2
Glass; Phys.Rev.Lett., 89, 135507-1~4(2002)
- Koichi KAJIHARA, Yoshiaki IKUTA, Masahiro HIRANO, and Hideo HOSONO:
Dependence of Defect Formation in SiO2 Glass by F2-laser-irradiation;
Applied Physics Letters, 81, 3164~66(2002)
- M. OHTO, S. KIKUGAWA, N. SARUKURA and H. HOSONO : Optical fiber for deep
ultraviolet light ;@IEEE Photon.Technol.Letter, 13,
978-980(2001)
- K. KAJIHARA, L.SKUJA, M. HIRANO and H. HOSONO : Formation and decay of
non-bridging oxcygen hole centers in SiO2 glasses induced by F2
irradiation: in situ observation using a pump and probe technique ; Appl.Phys.Lett.,
79, 1757-59(2001)
- H. HOSONO, Y. IKUTA, T. KINOSHITA and M. HIRANO : Physical disorder and
optical properties in vacuum ultraviolet region of amorphous SiO2
; Phys.Rev.Lett., 87, 175501(2001)
- Oxygen-related Intrinsic-Defects I Glassy SiO2: Interstitial
Ozone Molecules,@L.Skuja, M.Hirano and H.Hosono, Phys.Rev.Lett., 84,
302-304(2000)
- Experimental Evidence for Frenkel Defect Formation in Amorphous SiO2
by Electronic Exitation, Hideo HOSONO, Hiroshi KAWAZOE, and Noriaki
MATSUNAMI, Phys. Rev. Lett., 79, 4501-4503(1997)
Nano Devices
- Device
applications of natural nanostructures formed in nanocrystalline silicon
Z.A.K. Durrani, T. Kamiya, Y.T. Tan, H. Ahmed, and N. Lloyd:
Single-electron charging in nanocrystalline siilcon point-contacts; Microelectronic
Engineering, 63, 267-275 (2002)
H. MIZUTA, Y. FURUTA, T. KAMIYA, Y.T. TAN, Z.A.K. DURRANI, S. AMAKAWA, K.
NAKAZATO, and H. AHMED: Nanosilicon for single-electron devices; Current
Applied Physics 4, 98-101 (2004)
- Room-temperature
single-electron transistor
Y.T. TAN, T. KAMIYA, Z.A.K. DURRANI, and H. AHMED: Room
temperature nanocrystaline silicon single-electron transistors; J. Appl.
Phys. 94, 633 (2003)
T. Kamiya, Y.T. Tan, Z.A.K. Durrani, and H. Ahmed: Modification of the
tunneling barrier in a nanocrystalline silicon single-electron transistor; J.
Non-Cryst. Solids., 299-302, 405-410 (2002)
- Single-electron
transistor using silicon nanocrystallites for charging islands
Y.T. Tan, T. Kamiya, Z.A.K. Durrani and H. Ahmed:
Single-electron effects in side-gated point contacts fabricated in
low-temperature deposited nanocrystalline silicon films; Appl. Phys. Lett.
78 (2001) 1083-1085.
- Effects
of H2O vapor passivation on individual grain boundaries
T. KAMIYA, Z.A.K. DURRANI, H. AHMED, T. SAMESHIMA, Y. FURUTA,
H. MIZUTA, and N. LLOYD: Reduction of grain-boundary potential barrier
height in polycrystalline silicon with hot H2O-vapor annealing
probed using point-contact devices; J. Vac. Sci. Technol. B 21,
1000-1003 (2003)
- Properties
of individual grain boundary tunneling barriers in polycrystalline silicon
Toshio Kamiya, Z. A. K. Durrani, and H. Ahmed: Control of
grain-boundary tunneling barriers in polycrystalline silicon; Appl. Phys.
Lett., 81, 2388-2390 (2002).
Y. Furuta, H. Mizuta, K. Nakazato, T. Kamiya, Y.T. Tan, Z.A.K. Durrani, and
K. Taniguchi: Characterisation of tunnel-barriers in polycrystalline Si
point-contact single-electron transistors; Jpn. J. Appl. Phys., 41,
2675-2678 (2002)
- Effects
of individual grain boundaries on carrier transport in polycrystalline
silicon
Yoshikazu Furuta, Hiroshi Mizuta, Kazuo Nakazato, Yong Tsong.
Tan, Toshio Kamiya, Zahid A.K. Durrani, Haroon Ahmed and Kenji Taniguchi:
Carrier transport across a few grain boundaries in highly doped
polycrystalline silicon; Jpn. J. Appl. Phys. 40 (2001) L615-L617.
- Technique
to control nanostructures in silicon thin films
T. Kamiya, K. Nakahata, Y.T. Tan, Z.A.K. Durrani and I. Shimizu: Growth,
structure and transport properties of thin (>10 nm) n-type
microcrystalline silicon prepared on silicon oxide and its application to
single electron transistor; J. Appl. Phys. 89 (2001) 6265-6271.