Tokyo Institute of Technology
Kamiya-Katase Group

  • Hosono-
    Kamiya Gr.
  • Japanese
スライドショー
スライドショー
スライドショー
スライドショー

Create our original functional materials and devices

We create "New Functional Thin-film Materials" changing our world

It is known that currently widely-used semiconductors such as Si have limitations to develop e.g. low-cost & high-efficiency solar cells, ultra-large OLED TVs, and flexible transparent displays. In our laboratory, we have been challenging to explore really new functional materials different from the conventional electronic materials and to create novel optical, electronic, energy devices. One of our achievements is “IGZO”, which is a high-performance semiconductor material, replacing a conventional amorphous Si in flat panel displays, and is already commercialized in high-resolution LCD and very large OLED displays. As such, our propose is to find next functional thin-film materials, following IGZO, that will make our world better and fascinating. By our original “material design” concepts, we continue to challenge to dramatically enhance the performances of solar cells, transistors, thermoelectric devices, LEDs, lasers etc.
 

News & Topics

  • 2017. 04. 01 New staff: Dr. Katase as an Associate professor
  • 2017. 04. 01 New member: Two PhD. candidate and one undergraduate students
  • 2017. 03. 31 Farewell: Secretary Ms. Ochiai, Mr. Kishida, Mr. Kinjyo
  • 2017. 03. 10 Publication: J. Kim et al., "Conversion of an ultra-wide bandgap amorphous oxide insulator to a semiconductor" NPG Asia Mater. Vol. 9 (2017) p. e359
  • 2017. 03. 06 Visitor: Internship from National Institute of Technology, Kitakyushu College
  • 2017. 02. 10 Award: Inoue research award for Dr. Kim
  • 2017. 02. 10 Award: Doi award for Mr. Watanabe (M2)
  • 2017. 02. 10 Publication: J. Kim et al., " Transparent amorphous oxide semiconductors for organic electronics: Application to inverted OLEDs", Proc. Natl. Acad. Sci. USA, Vol. 114 (2017) 233
  • 2017. 01. 11 Publication: K. Ide, M. Kikuchi et al., "Effects of working pressure and annealing on bulk density and nanopore structures in amorphous In-Ga-Zn-O thin-film transistors”, Jpn. J. Appl. Phys. 56 (2017) 03BB03
  • 2016. 12. 15 Publication: Z. Xiao et al., " Amorphous pnictide semiconductor BaZn2As2 exhibiting high hole mobility”, Appl. Phys. Lett. 109 (2016) 242105
  • 2016. 11. 04 Publication: T. Kamiya et al., "Oxide TFTs” in Handbook of Visual Display Technology
  • 2016. 10. 21 Conference: Mr. Kobayashi (M2) and Mr. Watanabe (M2) attend TFMD conference at Kyoto
  • 2016. 09. 13 Conference: Mr. Kishida (M2) and Mr. Watanabe (M2) attend JSAP meeting at Yokohama
  • 2016. 09. 07 Conference: Mr. Kobayashi (M2) attend CSJ meeting at Hiroshima
  • 2016. 08. 30 Farewell: Farewell party for Mr. Niedermeier Christian
  • 2016. 08. 23 Conference: Mr. Watanabe (M2) attend IMID2016 at Jeju (Korea)
  • 2016. 07. 30 New member: Mr. Niedermeier Christian
  • 2016. 07. 06 Conference: Prof. Ide attend AMFPD2016 at Kyoto
  • 2016. 05. 30 Farewell: Ms. Liang go back to China
  • 2016. 04. 28 Publication: C. Niedermeier et al., “Solid phase epitaxial growth of high mobility La:BaSnO3 thin films co-doped with interstitial hydrogen” Appl. Phys. Lett. 108 (2016) 172101
  • 2016. 04. 11 Publication: T. Inoue et al., Nonequilibrium Rock-Salt-Type Pb-Doped SnSe with High Carrier Mobilities 300 cm2/(Vs)", Chem. Mater. 28 (2016) 2278
  • 2016. 04. 01 New member: Mr. Futakado and Mr. Ohta joined as undergraduate student
  • 2016. 03. 31 Award: JSAP young researcher award for Mr. Kim
  • 2016. 03. 28 Award: Doi award for Mr. Kim, Mr. Tang, Mr. Xiao
  • 2016. 03. 31 Farewell: Mr. Sekiya, Mr. Kikuchi
  • 2016. 03. 31 Party: Alumni association for Kawazaoe, Hosono, Kamiya group
  • 2016. 03. 25 Award: Best poster award (ITC 2016@Taiwan) for Mr. Kishida
  • 2016. 03. 04 Publication: Tang et al., “Effects of thermal annealing on elimination of deep defects in amorphous In-Ga-Zn-O thin-film transistors", Thin Solid Films 614 (2016) 73