第317回応用セラミックス研究所講演会 (Dr. Vlado Lazarov)
| 開催日時 | 2016年03月16日 14:00 -15:00 |
|---|---|
| 開催場所 | J1-704 |
| 主催 | 応用セラミックス研究所 |
| 連絡先 | 須崎 友文 准教授（E-mail: susaki@msl.titech.ac.jp） |
プログラム等
講師： Dr. Vlado Lazarov
(Department of Physics, University of York)
講演テーマ：
The role of interfaces and defects on halfmetallic
heterostructures
Abstract:
Halfmetallic materials have attracted significant research
attention research in the past decade due to their predicted
100% spin polarisation. The halfmetals incorporation in
heterostructure devices is very demanding since it requires
atomic control of the interfaces and structure of the
layers. In this talk I will present a correlation between
the functionality of model spintronic devices and their
atomic structure, with special focus on the effect of
intrinsic defects and interfaces on halfmetallicity and
ultimately on device performance.
1. D. Gilks, Z. Nedelkoski, L. Lari, B. Kuerbanjiang, K. Matsuzaki, T. Susaki, D. Kepaptsoglou, Q. Ramasse, K. McKeena and V.K. Lazarov, ’Atomic and electronic structure of twin growth defects in magnetite’, Scientific Reports 6, 20943, doi:10.1038/srep20943 (2016)
2. Zlatko Nedelkoski, Philip J Hasnip, Ana M Sanchez, Balati Kuerbanjiang, Edward Higgins, Mikihiko Oogane, Atsufumi Hirohata, Gavin R Bell, Vlado K Lazarov, ‘The effect of atomic structure on interface spin-polarization of half-metallic spin valves: Co2MnSi/Ag epitaxial interfaces, Applied Physics Letters 107 (21), 212404 (2015)
3. KP McKenna, F Hofer, D Gilks, VK Lazarov, C Chen, Z Wang, Y Ikuhara,’ Atomic-scale structure and properties of highly stable antiphase boundary defects in Fe3O4’, Nature Communications 5, doi:10.1038/ncomms6740 (2014)
